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IPG16N10S4-61 The Infineon IPG16N10S4-61 is a dual N-channel OptiMOS™-T2 Power MOSFET with a 100V breakdown voltage and 16A continuous drain current. It is AEC Q101 qualified and comes in a PG-TDSON-8 package.
Mfr Part #:

IPG16N10S4-61

Available from 1 distributors
Mfr Name: Infineon
Infineon
The Infineon IPG16N10S4-61 is a dual N-channel OptiMOS™-T2 Power MOSFET with a 100V breakdown voltage and 16A continuous drain current. It is AEC Q101 qualified and comes in a PG-TDSON-8 package.
✓ Total Stock: 9 pcs
$ Price Range: $2.93

IPG16N10S4-61 Available from 1 distributor

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Bristol Electronics ✓
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9 pcs
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IPG16N10S4-61 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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IPG16N10S4-61 Description

Short technical summary and product information.

The Infineon IPG16N10S4-61 is a dual N-channel, normal level enhancement mode Power MOSFET from the OptiMOS™-T2 family. It features a high breakdown voltage of 100V and a continuous drain current of 16A at 25°C case temperature.

 

Key electrical characteristics include a maximum drain-source on-state resistance of 61mΩ at 10V gate-source voltage and 16A drain current. The device offers a gate threshold voltage between 2.0V and 3.5V. Dynamic characteristics include input capacitance up to 580pF and output capacitance up to 240pF.

 

This MOSFET is AEC Q101 qualified, indicating its suitability for automotive applications. It operates at temperatures ranging from -55°C to +175°C and has an MSL1 rating up to 260°C peak reflow. The component is supplied in a PG-TDSON-8 surface-mount package.

IPG16N10S4-61 Quick Information

Product Type: Power MOSFET
Series: OptiMOS™-T2
Canonical Name: Infineon IPG16N10S4-61 OptiMOS™-T2 Power-Transistor
Subcategory: Power MOSFET

IPG16N10S4-61 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPG16N10S4-61 Estimated Pricing

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1+ $2.93 $2.93

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPG16N10S4-61 Features

  • Dual N-channel enhancement mode MOSFET.
  • AEC Q101 qualified for automotive use.
  • 100V drain-source breakdown voltage.
  • 16A continuous drain current.
  • PG-TDSON-8 surface mount package.

IPG16N10S4-61 Applications

  • Suitable for automotive power systems.
  • Ideal for high-efficiency switching applications.
  • Used in power management circuits.
  • Designed for normal level gate drive.

IPG16N10S4-61 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum continuous drain current for the IPG16N10S4-61?

The maximum continuous drain current is 16A at 25°C case temperature.

What is the drain-source breakdown voltage of the IPG16N10S4-61?

The drain-source breakdown voltage is 100V.

What is the maximum on-state resistance (R DS(on)) for this MOSFET?

The maximum drain-source on-state resistance is 61mΩ at V GS=10V and I D=16A.

What is the operating temperature range for the IPG16N10S4-61?

The operating temperature range is -55°C to +175°C.

What package type is the IPG16N10S4-61 supplied in?

The IPG16N10S4-61 is supplied in a PG-TDSON-8 package.

Is the IPG16N10S4-61 AEC Q101 qualified?

Yes, the IPG16N10S4-61 is AEC Q101 qualified.

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