| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Avalanche Energy (Single Pulse) (EAS) | |
| Continuous Drain Current (Nominal @ Tc=100 °C) | |
| Continuous Drain Current (Nominal @ Tc=25 °C) | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Fall Time (tf) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate Charge at Threshold (Qg(th)) | |
| Gate Resistance (Rg) | |
| Gate Threshold Voltage | |
| Gate-to-Drain Charge (Qgd) | |
| Gate-to-Source Charge (Qgs) | |
| IEC Climatic Category | |
| Input Capacitance (Ciss) | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance (Coss) | |
| Power Dissipation (Max) | |
| Pulsed Drain Current | |
| Rds On (Max) @ Id, Vgs | |
| Reverse Diode dv/dt | |
| Reverse Transfer Capacitance (Crss) | |
| Rise Time (tr) | |
| Supplier Device Package | |
| Technology | |
| Thermal Resistance (Junction-Ambient) (Maximum @ 6 cm² cooling area) | |
| Thermal Resistance (Junction-Ambient) (Maximum @ minimal footprint) | |
| Thermal Resistance, Junction to Case (RthJC) | |
| Transconductance (gfs) | |
| Turn-Off Delay Time (td(off)) | |
| Turn-On Delay Time (td(on)) | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| drain_source_on_resistance (Typical/Maximum @ Vgs=10 V, Id=30 A, SMD version) | |
| drain_source_on_resistance (Typical/Maximum @ Vgs=4.5 V, Id=30 A, SMD version) |
The IPF06N03LA G is an N-Channel enhancement-mode MOSFET from Infineon Technologies, part of the OptiMOS 2 family. It is designed for high-frequency DC/DC converter applications and features a logic-level gate drive. The device is qualified according to JEDEC standards for target applications.
Key electrical specifications include a drain-source voltage (Vdss) of 25V, a continuous drain current of 50A at both Tc=25°C and Tc=100°C, and a pulsed drain current of 350A. The drain-source on-state resistance is typically 4.8 mΩ (max 5.7 mΩ) at Vgs=10V and Id=30A, and typically 7.5 mΩ (max 9.4 mΩ) at Vgs=4.5V. The gate threshold voltage ranges from 1.2V to 2V, and the maximum gate-source voltage is ±20V.
The device offers excellent gate charge x RDS(on) product (FOM) and superior thermal resistance, with a junction-to-case thermal resistance of 1.8 K/W. It operates over a junction temperature range of -55°C to 175°C and is RoHS compliant with Pb-free lead plating.
The IPF06N03LA G is supplied in a TO-252-3 (DPak) surface-mount package (PG-TO252-3-23). It is suitable for high-frequency power switching applications where low on-resistance and fast switching are required.
| Qty | Low | High |
|---|---|---|
| 2,500+ | $0.56 | $0.56 |
| 5,000+ | $0.52 | $0.52 |
| 7,500+ | $0.52 | $0.52 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 25V.
The continuous drain current is 50A at both Tc=25°C and Tc=100°C.
The operating junction temperature range is -55°C to 175°C.
Yes, the IPF06N03LA G is RoHS compliant and has Pb-free lead plating.
The IPF06N03LA G is available in a TO-252-3 (DPak) surface-mount package (PG-TO252-3-23).
The drain-source on-state resistance is typically 4.8 mΩ (max 5.7 mΩ) at Vgs=10V and Id=30A, and typically 7.5 mΩ (max 9.4 mΩ) at Vgs=4.5V.
The gate threshold voltage is 1.2V (min), 1.6V (typ), and 2V (max) at Vds=Vgs and Id=40µA.