IPD95R750P7ATMA1 The IPD95R750P7ATMA1 is a 950V, 9A N-Channel MOSFET from Infineon's CoolMOS P7 series. It features a low on-resistance of 750mOhm and is housed in a surface-mount TO-252-3 package.
Mfr Part #:

IPD95R750P7ATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The IPD95R750P7ATMA1 is a 950V, 9A N-Channel MOSFET from Infineon's CoolMOS P7 series. It features a low on-resistance of 750mOhm and is housed in a surface-mount TO-252-3 package.
✓ Total Stock: 58 pcs
$ Price Range: $0.83 - $2.78

IPD95R750P7ATMA1 Available from 1 distributor

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IPD95R750P7ATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id

IPD95R750P7ATMA1 Description

Short technical summary and product information.

The IPD95R750P7ATMA1 is a 950V N-Channel enhancement mode power MOSFET from Infineon's CoolMOS P7 super junction series. It combines best-in-class figure of merit (RDS(on)*Eoss) with ease of use, featuring a low typical gate charge of 23 nC and input capacitance of 712 pF. The device integrates a Zener diode for ESD protection (HBM class 2) and offers a tight threshold voltage variation of ±0.5V around a typical 3V.

 

Key electrical specifications include a maximum drain-source voltage of 950V, continuous drain current of 9A, and maximum on-resistance of 750 mOhm at Vgs=10V. The MOSFET can dissipate up to 73W and operates over a junction temperature range of -55°C to 150°C.

 

This device is recommended for flyback topologies in LED lighting, low power chargers and adapters, smart meters, AUX power supplies, and industrial power applications. It is also suitable for power factor correction (PFC) stages in consumer and solar applications.

 

The IPD95R750P7ATMA1 is supplied in a PG-TO252-3 (DPak) surface-mount package with gull wing leads, enabling compact and efficient PCB assembly.

IPD95R750P7ATMA1 Quick Information

Product Type: MOSFET
Series: P7
Canonical Name: Infineon IPD95R750P7ATMA1 950V N-Channel CoolMOS P7 MOSFET
Subcategory: Single MOSFET

IPD95R750P7ATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPD95R750P7ATMA1 Estimated Pricing

Qty Low High
1+ $2.78 $2.78
10+ $1.79 $1.79
100+ $1.22 $1.22
500+ $1.03 $1.03
1,000+ $0.91 $0.91
2,500+ $0.84 $0.84
5,000+ $0.83 $0.83

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD95R750P7ATMA1 Features

  • 950V drain-source voltage rating.
  • 9A continuous drain current capability.
  • Low on-resistance of 750mOhm typical.
  • Integrated ESD protection diode.
  • Surface-mount TO-252-3 package.

IPD95R750P7ATMA1 Applications

  • Recommended for flyback LED lighting designs.
  • Suitable for low power chargers and adapters.
  • Used in smart meter and AUX power supplies.
  • Applicable for PFC stage in consumer electronics.

IPD95R750P7ATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IPD95R750P7ATMA1?

The maximum drain-source voltage is 950V.

What is the package type of this MOSFET?

It is available in a TO-252-3 (DPak) surface-mount package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the IPD95R750P7ATMA1 RoHS compliant?

The part is listed as RoHS3 compliant, but this status is unverified.

What is the typical gate charge of this MOSFET?

The typical gate charge is 23 nC at Vgs=10V.

What is the maximum on-resistance?

The maximum on-resistance is 750 mOhm at Id=4.5A and Vgs=10V.

What ESD protection does this device have?

It has integrated ESD protection with an HBM class of 2.

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