IPD95R750P7 The Infineon IPD95R750P7 is a 950V N-channel power MOSFET from the CoolMOS P7 series. It offers best-in-class performance with a maximum RDS(on) of 0.75Ω.
Mfr Part #:

IPD95R750P7

Available from 1 distributors
Mfr Name: Infineon
Infineon
The Infineon IPD95R750P7 is a 950V N-channel power MOSFET from the CoolMOS P7 series. It offers best-in-class performance with a maximum RDS(on) of 0.75Ω.
✓ Total Stock: 1,077 pcs

IPD95R750P7 Available from 1 distributor

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IPD95R750P7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Gate Charge
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IPD95R750P7 Description

Short technical summary and product information.

The Infineon IPD95R750P7 is a 950V N-channel power MOSFET utilizing the CoolMOS P7 technology. This series sets a new benchmark in 950V super junction technologies, combining high performance with ease of use.

 

Key electrical specifications include a maximum Drain-Source Voltage (VDS) of 950V, a maximum On-Resistance (RDS(on)) of 0.75Ω, and a typical Gate Charge (Qg) of 23nC. The device also features a typical Gate-Source Threshold Voltage (VGS(th)) of 3V and an ESD class of 2 (HBM).

 

This MOSFET is recommended for flyback topologies in applications such as LED lighting, low-power chargers and adapters, smart meters, AUX power, and industrial power supplies. It is also suitable for PFC stages in consumer and solar applications. The device is fully qualified according to JEDEC for Industrial Applications.

 

The IPD95R750P7 comes in a PG-TO252-3 package, designed for surface mounting. Its features contribute to higher power density designs, BOM savings, and lower assembly costs.

IPD95R750P7 Quick Information

Product Type: MOSFET
Series: SJ
Canonical Name: 950V CoolMOS P7 SJ N-channel Power MOSFET
Subcategory: Power MOSFET

IPD95R750P7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPD95R750P7 Features

  • 950V Drain-Source Voltage rating.
  • 0.75Ω maximum On-Resistance.
  • 23nC typical Gate Charge.
  • Integrated Zener Diode ESD protection.
  • PG-TO252-3 surface mount package.

IPD95R750P7 Applications

  • Recommended for flyback topologies.
  • Suitable for LED lighting applications.
  • Used in low-power chargers and adapters.
  • Applicable for industrial power supplies.
  • Used in PFC stages for consumer and solar.

IPD95R750P7 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum Drain-Source Voltage for the IPD95R750P7?

The maximum Drain-Source Voltage (VDS) at Tj=25°C is 950V.

What is the maximum On-Resistance of the IPD95R750P7 MOSFET?

The maximum On-Resistance (RDS(on)) is 0.75Ω.

What is the typical Gate Charge for the IPD95R750P7?

The typical Gate Charge (Qg) is 23nC.

What is the typical Gate-Source Threshold Voltage?

The typical Gate-Source Threshold Voltage (VGS(th)) is 3V.

What package type is the IPD95R750P7 supplied in?

The IPD95R750P7 is supplied in a PG-TO252-3 package.

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