| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,077 pcs
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1077 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IPD95R750P7 is a 950V N-channel power MOSFET utilizing the CoolMOS P7 technology. This series sets a new benchmark in 950V super junction technologies, combining high performance with ease of use.
Key electrical specifications include a maximum Drain-Source Voltage (VDS) of 950V, a maximum On-Resistance (RDS(on)) of 0.75Ω, and a typical Gate Charge (Qg) of 23nC. The device also features a typical Gate-Source Threshold Voltage (VGS(th)) of 3V and an ESD class of 2 (HBM).
This MOSFET is recommended for flyback topologies in applications such as LED lighting, low-power chargers and adapters, smart meters, AUX power, and industrial power supplies. It is also suitable for PFC stages in consumer and solar applications. The device is fully qualified according to JEDEC for Industrial Applications.
The IPD95R750P7 comes in a PG-TO252-3 package, designed for surface mounting. Its features contribute to higher power density designs, BOM savings, and lower assembly costs.
The maximum Drain-Source Voltage (VDS) at Tj=25°C is 950V.
The maximum On-Resistance (RDS(on)) is 0.75Ω.
The typical Gate Charge (Qg) is 23nC.
The typical Gate-Source Threshold Voltage (VGS(th)) is 3V.
The IPD95R750P7 is supplied in a PG-TO252-3 package.