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274 pcs
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274 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request |
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The Infineon IPD95R1K2P7 is a 950V N-channel power MOSFET from the CoolMOS P7 SJ series. This device sets a new benchmark in super junction technologies, combining high performance with ease of use.
Key electrical specifications include a maximum Drain-Source Voltage (Vds) of 950V, a maximum On-Resistance (Rds(on)) of 1.2Ω, and a typical Gate Charge (Qg) of 15nC. It also features a typical Gate Threshold Voltage (Vgs(th)) of 3V and an energy loss (Eoss) of 1.3µJ at 500V.
The IPD95R1K2P7 is housed in a PG-TO252-3 (DPAK) package, suitable for surface mount applications. It is recommended for flyback topologies in LED lighting, low power chargers and adapters, smart meters, AUX power, and industrial power supplies. It is also suitable for PFC stages in consumer and solar applications.
This product is fully qualified according to JEDEC for Industrial Applications, ensuring reliability and performance in demanding environments.
950V
PG-TO252-3 surface-mount package
1.2Ω
6A
15nC
3V
Class 2 (HBM)