IPD90R1K2C3ATMA1 N-Channel 900V MOSFET with 5.1A continuous drain current. Surface mount in TO-252-3 (DPak) package.
Mfr Part #:

IPD90R1K2C3ATMA1

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel 900V MOSFET with 5.1A continuous drain current. Surface mount in TO-252-3 (DPak) package.
✓ Total Stock: 2,497 pcs
$ Price Range: $0.68 - $0.73

IPD90R1K2C3ATMA1 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,400 pcs
2400 pcs On Request 1 On Request On Request 22+ On Request On Request
Non-Authorised Inventory information
97 pcs
97 pcs On Request 1 On Request On Request On Request On Request On Request

IPD90R1K2C3ATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Reverse Recovery Time
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id

IPD90R1K2C3ATMA1 Description

Short technical summary and product information.

The Infineon IPD90R1K2C3ATMA1 is an N-Channel enhancement mode power MOSFET built with CoolMOS technology. It features a drain-source voltage rating of 900V and a continuous drain current of 5.1A at 25°C case temperature. The device offers low conduction losses with a maximum on-resistance of 1.2 Ohm at 2.8A gate drive. Gate charge is typically 28 nC, and input capacitance is 710 pF, enabling efficient switching.

 

This MOSFET is designed for high-voltage power conversion applications including quasi-resonant flyback and forward topologies, PC silverbox power supplies, and industrial SMPS. It is avalanche rated at 68 mJ single pulse and exhibits extreme dv/dt capability. The internal diode has a typical forward voltage of 0.8V and a reverse recovery time of 310 ns.

 

Packaged in a PG-TO252-3 (DPak) surface mount package, the device supports a maximum power dissipation of 83W at 25°C case temperature. Operating junction temperature range is -55°C to 150°C. The component is RoHS compliant and features Pb-free lead plating.

IPD90R1K2C3ATMA1 Quick Information

Product Type: MOSFET
Series: CoolMOS C3
Canonical Name: Infineon IPD90R1K2C3ATMA1 N-Channel 900V MOSFET
Subcategory: Single MOSFET

IPD90R1K2C3ATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

IPD90R1K2C3ATMA1 Estimated Pricing

Qty Low High
2,500+ $0.73 $0.73
5,000+ $0.70 $0.70
12,500+ $0.68 $0.68

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD90R1K2C3ATMA1 Features

  • 900V drain-source breakdown voltage.
  • 5.1A continuous drain current at 25°C.
  • Low Rds(on) of 1.2 Ohm max.
  • Ultra low gate charge 28 nC typical.
  • RoHS compliant and Pb-free plating.

IPD90R1K2C3ATMA1 Applications

  • Ideal for quasi-resonant flyback converters.
  • Suitable for PC silverbox power supplies.
  • Used in industrial SMPS designs.
  • High peak current capability for demanding loads.

IPD90R1K2C3ATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

Maximum 900V.

What is the continuous drain current?

5.1A at 25°C case temperature, 3.2A at 100°C.

What package is this MOSFET available in?

TO-252-3 (DPak) surface mount package.

What is the operating temperature range?

-55°C to 150°C junction temperature.

Is this device RoHS compliant?

Yes, RoHS3 compliant.

What is the typical gate charge?

28 nC at 10V.

What is the maximum drain-source on-resistance?

1.2 Ohm at 2.8A, 10V.

Home
Account

Categories