IPD90P04P4L04ATMA2 P-Channel MOSFET with 40V drain-source voltage, 90A continuous drain current, in a TO252-3 package. AEC qualified and RoHS compliant.
Mfr Part #:

IPD90P04P4L04ATMA2

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
P-Channel MOSFET with 40V drain-source voltage, 90A continuous drain current, in a TO252-3 package. AEC qualified and RoHS compliant.
✓ Total Stock: 3,520 pcs
$ Price Range: $0.94 - $2.75

IPD90P04P4L04ATMA2 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,520 pcs
3520 pcs On Request 1 On Request On Request On Request On Request On Request

IPD90P04P4L04ATMA2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPD90P04P4L04ATMA2 Description

Short technical summary and product information.

The IPD90P04P4L04ATMA2 is a P-Channel enhancement mode MOSFET from Infineon's OptiMOS-P2 family. It is designed for logic level gate drive with a gate threshold voltage of -1.2V to -2.2V. The device is rated for a maximum drain-source voltage of -40V and a continuous drain current of -90A at Tc=25°C. The on-resistance is typically 3.6 mOhm and maximum 4.3 mOhm at VGS=-10V. This MOSFET is AEC qualified for automotive applications and is 100% avalanche tested. It is housed in a PG-TO252-3-313 package (DPAK) with a junction-to-case thermal resistance of 1.2 K/W. The operating junction temperature range is -55°C to 175°C. The device is RoHS compliant and meets MSL1 up to 260°C peak reflow. Dynamic characteristics include typical input capacitance of 8900 pF and output capacitance of 2532 pF.

IPD90P04P4L04ATMA2 Quick Information

Product Type: Power MOSFET
Series: OptiMOS-P2
Canonical Name: IPD90P04P4L04ATMA2
Subcategory: P-Channel MOSFET

IPD90P04P4L04ATMA2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: Compliant

IPD90P04P4L04ATMA2 Estimated Pricing

Qty Low High
1+ $2.75 $2.75
10+ $1.81 $1.81
100+ $1.27 $1.27
500+ $1.04 $1.04
1,000+ $0.97 $0.97
2,500+ $0.94 $0.94

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD90P04P4L04ATMA2 Features

  • P-Channel enhancement mode MOSFET.
  • Logic level gate threshold voltage.
  • Rated for 40V drain-source voltage.
  • Continuous drain current of 90A.
  • Low on-resistance of 4.3 mOhm.

IPD90P04P4L04ATMA2 Applications

  • Suitable for automotive power management.
  • Used in DC-DC converter circuits.
  • Ideal for load switching applications.
  • Can be used in motor control systems.

IPD90P04P4L04ATMA2 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage of this MOSFET?

The maximum drain-source voltage is -40V.

What is the package type of this MOSFET?

PG-TO252-3-313 (DPAK).

What is the operating temperature range?

-55°C to 175°C.

Is this component RoHS compliant?

Yes, it is RoHS compliant (green package).

What is the continuous drain current?

90A at Tc=25°C, VGS=-10V.

What is the gate threshold voltage?

-1.2V to -2.2V at ID=-250µA.

What is the on-resistance?

4.3 mOhm maximum at VGS=-10V, ID=-90A.

Home
Account

Categories