IPD90P04P4L04ATMA1 P-Channel MOSFET, 40V drain-source voltage, 90A continuous drain current, surface mount TO-252-3 package.
Mfr Part #:

IPD90P04P4L04ATMA1

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
P-Channel MOSFET, 40V drain-source voltage, 90A continuous drain current, surface mount TO-252-3 package.
✓ Total Stock: 1,897 pcs
$ Price Range: $1.06

IPD90P04P4L04ATMA1 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,357 pcs
1357 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
540 pcs
540 pcs On Request 1 On Request On Request On Request On Request On Request

IPD90P04P4L04ATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPD90P04P4L04ATMA1 Description

Short technical summary and product information.

The IPD90P04P4L04ATMA1 is a P-Channel enhancement mode MOSFET from Infineon's OptiMOS-P2 series. It features a drain-source voltage of 40V and a continuous drain current of 90A at 25°C case temperature. The device is designed for high efficiency power conversion and switching applications.

 

Key electrical characteristics include a typical on-resistance of 3.6 mΩ at Vgs=-10V and 5.1 mΩ at Vgs=-4.5V. The gate threshold voltage ranges from -1.2V to -2.2V. The device offers fast switching with typical turn-on delay of 20 ns and turn-off delay of 140 ns. It is avalanche rated with a single pulse avalanche energy of 60 mJ.

 

The MOSFET is housed in a PG-TO252-3-313 package (DPak) suitable for surface mount assembly. It operates over a junction temperature range of -55°C to 175°C. The device is RoHS compliant and MSL1 rated for up to 260°C peak reflow. It is AEC qualified for automotive applications.

IPD90P04P4L04ATMA1 Quick Information

Product Type: P-Channel MOSFET
Series: OptiMOS-P2
Canonical Name: Infineon IPD90P04P4L04ATMA1 P-Channel MOSFET, 40V, 90A, TO-252-3
Subcategory: Single MOSFET

IPD90P04P4L04ATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

IPD90P04P4L04ATMA1 Estimated Pricing

Qty Low High
2,500+ $1.06 $1.06

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD90P04P4L04ATMA1 Features

  • P-Channel enhancement mode MOSFET.
  • 40V drain-source voltage rating.
  • 90A continuous drain current capability.
  • Low on-resistance of 3.6 mΩ typical.
  • Surface mount TO-252-3 package.

IPD90P04P4L04ATMA1 Applications

  • Used in automotive power management systems.
  • Suitable for DC-DC converter circuits.
  • Ideal for load switching applications.
  • Applicable in battery protection circuits.

IPD90P04P4L04ATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating temperature range?

-55°C to 175°C junction temperature.

What package is the IPD90P04P4L04ATMA1 available in?

PG-TO252-3-313 (DPak, TO-252-3).

Is the IPD90P04P4L04ATMA1 RoHS compliant?

Yes, it is RoHS3 compliant as per the datasheet.

What is the drain-source on-resistance?

3.6 mΩ typical at Vgs=-10V, Id=-90A; 5.1 mΩ typical at Vgs=-4.5V, Id=-85A.

What is the maximum drain current?

90A continuous at Tc=25°C, 360A pulsed.

Is this MOSFET AEC qualified?

Yes, it is AEC qualified for automotive applications.

What is the gate threshold voltage?

Minimum -1.2V, typical -1.7V, maximum -2.2V.

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