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IPD90P04P4L-04 The Infineon IPD90P04P4L-04 is a P-channel OptiMOS®-P2 Power MOSFET. It offers a -40V drain-source breakdown voltage and a continuous drain current of -90A.
Mfr Part #:

IPD90P04P4L-04

Available from 2 distributors
Mfr Name: Infineon
Infineon
The Infineon IPD90P04P4L-04 is a P-channel OptiMOS®-P2 Power MOSFET. It offers a -40V drain-source breakdown voltage and a continuous drain current of -90A.
✓ Total Stock: 9,494 pcs
$ Price Range: $1.88

IPD90P04P4L-04 Available from 2 distributors

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✓ Non-Authorised
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Fe Components ✓
Non-Authorised Inventory information
7,494 pcs
On Request
7494 pcs On Request 1 On Request On Request On Request On Request On Request
Risen Electronics ✓
Non-Authorised Inventory information
2,000 pcs
On Request
2000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IPD90P04P4L-04 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Manufacturer Name
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Power Dissipation
Reverse Recovery Time
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IPD90P04P4L-04 Description

Short technical summary and product information.

The Infineon IPD90P04P4L-04 is a P-channel, logic-level, enhancement-mode Power MOSFET from the OptiMOS®-P2 family. It is AEC qualified and designed for high-performance applications.

 

Key electrical characteristics include a drain-source breakdown voltage of -40V and a continuous drain current of -90A at 25°C case temperature with a VGS of -10V. The on-state resistance (RDS(on)) is as low as 3.6mW at VGS=-10V and ID=-90A. The device operates over a wide temperature range from -55°C to +175°C.

 

This MOSFET features a PG-TO252-3-313 package, suitable for surface mounting. It is designed for 175°C operating temperature and is RoHS compliant. The device is 100% avalanche tested, ensuring reliability in demanding applications.

IPD90P04P4L-04 Quick Information

Product Type: Power MOSFET
Series: OptiMOS®-P2
Canonical Name: Infineon IPD90P04P4L-04 P-channel Power MOSFET
Subcategory: Power MOSFET

IPD90P04P4L-04 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPD90P04P4L-04 Estimated Pricing

Qty Low High
1+ $1.88 $1.88

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD90P04P4L-04 Features

  • P-channel logic-level enhancement mode MOSFET.
  • AEC qualified for automotive applications.
  • Continuous drain current of -90A.
  • Low on-state resistance down to 3.6mW.
  • Operates up to 175°C.

IPD90P04P4L-04 Applications

  • Suitable for automotive applications.
  • Ideal for high-current switching.
  • Power management solutions.
  • Efficient power conversion.

IPD90P04P4L-04 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage for the IPD90P04P4L-04?

The drain-source breakdown voltage is -40V.

What is the typical gate threshold voltage for this MOSFET?

The typical gate threshold voltage is -1.7V.

What is the maximum continuous drain current?

The maximum continuous drain current is -90A.

What is the typical on-state resistance at VGS=-10V?

The typical on-state resistance is 3.6mW.

What is the operating temperature range?

The operating and storage temperature range is -55°C to +175°C.

What package type is the IPD90P04P4L-04 supplied in?

It is supplied in the PG-TO252-3-313 package.

Is this MOSFET RoHS compliant?

Yes, it is RoHS3 Compliant.

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