IPD90P04P405ATMA2 P-Channel MOSFET from Infineon Technologies with 40V drain-source voltage, 90A continuous drain current, and 4.7mOhm on-resistance. Surface mount package TO-252-3.
Mfr Part #:

IPD90P04P405ATMA2

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
P-Channel MOSFET from Infineon Technologies with 40V drain-source voltage, 90A continuous drain current, and 4.7mOhm on-resistance. Surface mount package TO-252-3.
✓ Total Stock: 321 pcs
$ Price Range: $0.90 - $2.66

IPD90P04P405ATMA2 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
321 pcs
321 pcs On Request 1 On Request On Request On Request On Request On Request

IPD90P04P405ATMA2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPD90P04P405ATMA2 Description

Short technical summary and product information.

The IPD90P04P405ATMA2 is a P-Channel enhancement mode MOSFET from Infineon's OptiMOS-P2 family. It features a drain-source voltage of 40V and a continuous drain current of 90A at 25°C. The maximum on-resistance is 4.7mOhm at Vgs=10V and Id=90A. This device is designed for high efficiency power conversion and switching applications. It is AEC qualified and operates over a junction temperature range of -55°C to 175°C. The MOSFET is housed in a PG-TO252-3-313 surface mount package, which is compatible with standard TO-252 footprints. The package is RoHS compliant and has an MSL of 1 (unlimited). The device is 100% avalanche tested and has a single pulse avalanche energy rating of 60mJ. Key dynamic characteristics include input capacitance of 10300pF and total gate charge of 154nC. The thermal resistance from junction to case is 1.2 K/W, and maximum power dissipation is 125W at 25°C case temperature. Typical applications include load switches, battery protection, and power management in automotive and industrial systems.

IPD90P04P405ATMA2 Quick Information

Product Type: MOSFET
Series: OptiMOS-P2
Canonical Name: Infineon Technologies IPD90P04P405ATMA2 P-Channel MOSFET
Subcategory: P-Channel MOSFET

IPD90P04P405ATMA2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): MSL 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Green (RoHS compliant)

IPD90P04P405ATMA2 Estimated Pricing

Qty Low High
1+ $2.66 $2.66
10+ $1.75 $1.75
100+ $1.23 $1.23
500+ $1.01 $1.01
1,000+ $0.94 $0.94
2,500+ $0.90 $0.90

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD90P04P405ATMA2 Features

  • P-Channel enhancement mode MOSFET.
  • 40V drain-source voltage rating.
  • 90A continuous drain current at 25°C.
  • 4.7mOhm maximum on-resistance.
  • AEC qualified for automotive applications.

IPD90P04P405ATMA2 Applications

  • Used in automotive load switches.
  • Suitable for battery protection circuits.
  • Ideal for power management in industrial systems.
  • High efficiency DC-DC converter designs.

IPD90P04P405ATMA2 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

40V.

What package is this MOSFET available in?

PG-TO252-3-313 (DPak, TO-252-3).

What is the operating temperature range?

-55°C to 175°C (junction).

Is this device RoHS compliant?

Yes, it is RoHS3 compliant (unverified).

What is the maximum continuous drain current?

90A at Tc=25°C with Vgs=-10V.

What is the on-resistance?

4.7mOhm maximum at Vgs=10V, Id=90A.

What is the gate threshold voltage?

4V maximum at Id=250µA.

Home
Account

Categories