IPD90P04P405ATMA1 P-Channel enhancement mode MOSFET with 40V drain-source breakdown voltage and 90A continuous drain current. Features low on-resistance of 4.7 mOhm and is housed in a surface-mount TO-252-3 package.
Mfr Part #:

IPD90P04P405ATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
P-Channel enhancement mode MOSFET with 40V drain-source breakdown voltage and 90A continuous drain current. Features low on-resistance of 4.7 mOhm and is housed in a surface-mount TO-252-3 package.
✓ Total Stock: 540 pcs
$ Price Range: $0.78 - $0.80

IPD90P04P405ATMA1 Available from 1 distributor

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✓ Non-Authorised
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IPD90P04P405ATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPD90P04P405ATMA1 Description

Short technical summary and product information.

The IPD90P04P405ATMA1 is a P-Channel enhancement mode MOSFET from Infineon's OptiMOS-P2 series. It is designed for high efficiency power management applications. With a drain-source breakdown voltage of -40V and a continuous drain current of -90A at Tc=25°C, this device offers low conduction losses. The maximum drain-source on-resistance is 4.7 mOhm at Vgs=-10V and Id=-90A.

 

The device features a total gate charge of 154 nC and input capacitance of 10300 pF, enabling fast switching. It is avalanche rated with a single pulse energy of 60 mJ at Id=-45A. The operating junction temperature range is -55°C to 175°C, and the thermal resistance junction-to-case is 1.2 K/W.

 

The IPD90P04P405ATMA1 is housed in a PG-TO252-3-313 surface-mount package (TO-252-3, DPak). It is AEC qualified and RoHS compliant with MSL1 level. This MOSFET is suitable for automotive, DC-DC converter, load switching, and battery protection circuits.

IPD90P04P405ATMA1 Quick Information

Product Type: MOSFET - Single
Series: OptiMOS-P2
Canonical Name: P-Channel MOSFET, 40V, 90A, TO-252-3
Subcategory: P-Channel MOSFET

IPD90P04P405ATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

IPD90P04P405ATMA1 Estimated Pricing

Qty Low High
2,500+ $0.80 $0.80
5,000+ $0.78 $0.78

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD90P04P405ATMA1 Features

  • P-Channel enhancement mode MOSFET.
  • Low drain-source on-resistance of 4.7 mOhm.
  • High continuous drain current rating of -90A.
  • AEC qualified for automotive applications.
  • RoHS compliant green package.

IPD90P04P405ATMA1 Applications

  • Automotive power management systems.
  • DC-DC converter circuits.
  • Load switching applications.
  • Battery protection circuits.

IPD90P04P405ATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of this MOSFET?

The drain-source breakdown voltage is minimum -40V.

What package is the IPD90P04P405ATMA1 available in?

It is available in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface-mount package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

Is this component RoHS compliant?

Yes, it is RoHS3 compliant as indicated in the datasheet.

What is the maximum drain-source on-resistance?

Maximum Rds(on) is 4.7 mOhm at Vgs=-10V and Id=-90A.

What is the continuous drain current rating?

The continuous drain current is -90A at Tc=25°C and Vgs=-10V.

What is the single pulse avalanche energy rating?

The single pulse avalanche energy is 60 mJ at Id=-45A.

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