IPD90P04P4-05 The Infineon IPD90P04P4-05 is a P-channel Power MOSFET designed for demanding applications. It offers a -40V drain-source breakdown voltage and a continuous drain current of -90A.
Mfr Part #:

IPD90P04P4-05

Available from 3 distributors
Mfr Name: Infineon
Infineon
The Infineon IPD90P04P4-05 is a P-channel Power MOSFET designed for demanding applications. It offers a -40V drain-source breakdown voltage and a continuous drain current of -90A.
✓ Total Stock: 6,098 pcs
$ Price Range: $2.40

IPD90P04P4-05 Available from 3 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,200 pcs
4200 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,712 pcs
1712 pcs On Request 1 On Request On Request On Request On Request On Request
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186 pcs
186 pcs On Request 1 On Request On Request 17+ On Request On Request

IPD90P04P4-05 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Input Capacitance
Mounting Type
Operating Temperature
Power Dissipation
Reverse Recovery Time

IPD90P04P4-05 Description

Short technical summary and product information.

The Infineon IPD90P04P4-05 is a P-channel, normal level, enhancement mode Power MOSFET from the OptiMOS®-P2 family. It is AEC qualified and designed for high-performance applications.

 

Key electrical characteristics include a drain-source breakdown voltage of -40V and a maximum drain-source on-state resistance of 4.7 mΩ at -10V gate-source voltage and -90A drain current. The continuous drain current is rated at -90A at 25°C case temperature.

 

This MOSFET operates over a wide temperature range from -55°C to +175°C. It features a thermal resistance junction-to-case of 1.2 K/W. The device is supplied in a PG-TO252-3-313 package, suitable for surface mounting.

 

Additional features include 100% avalanche tested and a green package compliant with RoHS standards. The MSL rating is 1.

IPD90P04P4-05 Quick Information

Product Type: Power MOSFET
Series: OptiMOS®-P2
Canonical Name: Infineon IPD90P04P4-05 P-Channel Power MOSFET
Subcategory: P-Channel

IPD90P04P4-05 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPD90P04P4-05 Estimated Pricing

Qty Low High
1+ $2.40 $2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD90P04P4-05 Features

  • P-channel enhancement mode MOSFET
  • AEC qualified for automotive use
  • -40V drain-source breakdown voltage
  • -90A continuous drain current
  • Low on-resistance of 4.7mΩ

IPD90P04P4-05 Applications

  • Suitable for power switching applications
  • Automotive power management
  • High current DC-DC converters
  • Load switch applications

IPD90P04P4-05 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage?

-40V minimum at VGS=0V, ID=-1mA.

What is the continuous drain current?

-90A at TC=25°C, VGS=-10V.

What is the on-resistance?

3.5mΩ typical, 4.7mΩ maximum at VGS=-10V, ID=-90A.

What is the gate threshold voltage?

-2.0V minimum, -3.0V typical, -4.0V maximum at VDS=VGS, ID=-250µA.

What is the operating temperature range?

-55°C to +175°C.

What package is it available in?

PG-TO252-3-313 (DPAK) surface mount package.

What is the maximum power dissipation?

125W at TC=25°C.

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