| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,200 pcs
|
4200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,712 pcs
|
1712 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
186 pcs
|
186 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
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| Manufacturer Name | |
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The Infineon IPD90P04P4-05 is a P-channel, normal level, enhancement mode Power MOSFET from the OptiMOS®-P2 family. It is AEC qualified and designed for high-performance applications.
Key electrical characteristics include a drain-source breakdown voltage of -40V and a maximum drain-source on-state resistance of 4.7 mΩ at -10V gate-source voltage and -90A drain current. The continuous drain current is rated at -90A at 25°C case temperature.
This MOSFET operates over a wide temperature range from -55°C to +175°C. It features a thermal resistance junction-to-case of 1.2 K/W. The device is supplied in a PG-TO252-3-313 package, suitable for surface mounting.
Additional features include 100% avalanche tested and a green package compliant with RoHS standards. The MSL rating is 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-40V minimum at VGS=0V, ID=-1mA.
-90A at TC=25°C, VGS=-10V.
3.5mΩ typical, 4.7mΩ maximum at VGS=-10V, ID=-90A.
-2.0V minimum, -3.0V typical, -4.0V maximum at VDS=VGS, ID=-250µA.
-55°C to +175°C.
PG-TO252-3-313 (DPAK) surface mount package.
125W at TC=25°C.