| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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185 pcs
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185 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies IPD90P04P4-05 is an OptiMOS®-P2 series P-channel Power MOSFET. It is AEC qualified and designed for high-performance applications, operating at temperatures up to 175°C.
Key electrical characteristics include a drain-source breakdown voltage of -40V and a maximum continuous drain current of -90A at 25°C. The device exhibits a low drain-source on-state resistance of typically 3.5mΩ and a maximum of 4.7mΩ at -10V gate-source voltage and -90A drain current.
This MOSFET is available in a PG-TO252-3-313 package, suitable for surface mounting. It features enhancement mode operation and is 100% avalanche tested, ensuring reliability in power applications. The green package is RoHS compliant.
With its robust specifications, including high current handling and low on-resistance, the IPD90P04P4-05 is suitable for various power management circuits where efficiency and reliability are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.87 | $1.87 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-40V
-90A
3.5mΩ
-55°C to +175°C
PG-TO252-3-313