IPD90P03P4L04ATMA1 P-Channel MOSFET, 30V drain-source voltage, 90A continuous drain current, 4.1mΩ on-resistance at 10V. Surface-mount TO-252-3 (DPak) package.
Mfr Part #:

IPD90P03P4L04ATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
P-Channel MOSFET, 30V drain-source voltage, 90A continuous drain current, 4.1mΩ on-resistance at 10V. Surface-mount TO-252-3 (DPak) package.
✓ Total Stock: 10,000 pcs

IPD90P03P4L04ATMA1 Available from 1 distributor

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IPD90P03P4L04ATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Reverse Recovery Time
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPD90P03P4L04ATMA1 Description

Short technical summary and product information.

The IPD90P03P4L04ATMA1 is a P-channel enhancement mode MOSFET from Infineon's OptiMOS-P2 family. It features a maximum drain-source voltage of -30V and a continuous drain current of -90A at 25°C case temperature. The device offers low on-resistance, with a maximum of 4.1mΩ at VGS=-10V and 6.8mΩ at VGS=-4.5V.

 

Key electrical characteristics include a maximum gate threshold voltage of -2.0V, input capacitance of 11300pF, and total gate charge of 160nC. The switching performance is characterized with typical turn-on delay of 17ns, rise time of 11ns, turn-off delay of 140ns, and fall time of 40ns. The device is rated for a maximum power dissipation of 137W at 25°C case temperature.

 

The MOSFET is AEC qualified and 100% avalanche tested, with an avalanche energy capability of 370mJ. It is designed for applications such as reverse battery protection. The operating junction temperature range is -55°C to 175°C.

 

Packaged in a surface-mount TO-252-3 (DPak) case (Infineon PG-TO252-3-11), the device is RoHS compliant and rated MSL1 (unlimited at 260°C peak reflow).

IPD90P03P4L04ATMA1 Quick Information

Product Type: MOSFET
Series: OptiMOS-P2
Canonical Name: IPD90P03P4L04ATMA1 — P-Channel Enhancement Mode MOSFET, 30V, 90A, TO-252-3
Subcategory: P-Channel MOSFET

IPD90P03P4L04ATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): MSL1 Unlimited (260°C peak reflow)
REACH Status: REACH Unaffected

IPD90P03P4L04ATMA1 Features

  • P-channel logic level enhancement mode MOSFET.
  • 30V drain-source voltage rating.
  • 90A continuous drain current capability.
  • 4.1mΩ low on-resistance at 10V.
  • AEC qualified for automotive applications.

IPD90P03P4L04ATMA1 Applications

  • Reverse battery protection circuits.
  • Automotive power management systems.
  • High-current switching applications.
  • DC-DC converters and load switches.

IPD90P03P4L04ATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

The maximum drain-source voltage is -30V (P-channel, negative polarity).

What is the package type?

The package is TO-252-3 (DPak) with Infineon PG-TO252-3-11 as the supplier device package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

Is this component RoHS compliant?

Yes, it is RoHS3 compliant as verified in the datasheet.

What is the continuous drain current rating?

The continuous drain current is -90A at 25°C case temperature with VGS=-10V.

What is the drain-source on-resistance at 10V gate drive?

The maximum on-resistance is 4.1mΩ at VGS=-10V, ID=-90A; typical is 3.3mΩ.

Is this part AEC qualified?

Yes, the datasheet states AEC qualification.

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