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IPD90P03P4L-04 The Infineon IPD90P03P4L-04 is a P-channel MOSFET designed for automotive applications. It features a -30V drain-source breakdown voltage and a continuous drain current of -90A.
Mfr Part #:

IPD90P03P4L-04

Available from 3 distributors
Mfr Name: Infineon
Infineon
The Infineon IPD90P03P4L-04 is a P-channel MOSFET designed for automotive applications. It features a -30V drain-source breakdown voltage and a continuous drain current of -90A.
✓ Total Stock: 9,468 pcs
$ Price Range: $0.99

IPD90P03P4L-04 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Xingangxin ✓
Non-Authorised Inventory information
4,737 pcs
On Request
4737 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
2,500 pcs
On Request
2500 pcs On Request 1 On Request On Request 22+ On Request On Request
Braun Electronic Components ✓
Non-Authorised Inventory information
2,231 pcs
On Request
2231 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IPD90P03P4L-04 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Mounting Type
Power Dissipation
Reverse Recovery Time
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IPD90P03P4L-04 Description

Short technical summary and product information.

The Infineon IPD90P03P4L-04 is an OptiMOS®-P2 series P-channel MOSFET. This device is AEC qualified and designed for enhancement mode operation with logic-level gate drive.

 

Key electrical characteristics include a drain-source breakdown voltage of -30V and a maximum continuous drain current of -90A at 25°C. The on-state resistance (RDS(on)) is as low as 3.3mΩ at VGS=-10V and ID=-90A, ensuring efficient power handling. The device operates over a wide temperature range from -55°C to +175°C.

 

Packaged in a PG-TO252-3-11 surface-mount package, the IPD90P03P4L-04 is suitable for various automotive and industrial applications requiring robust power switching. Its features include 100% avalanche tested and RoHS compliance.

IPD90P03P4L-04 Quick Information

Product Type: MOSFET
Series: OptiMOS®-P2
Canonical Name: Infineon IPD90P03P4L-04 P-channel MOSFET
Subcategory: Power MOSFET

IPD90P03P4L-04 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPD90P03P4L-04 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD90P03P4L-04 Features

  • P-channel logic level enhancement mode MOSFET.
  • AEC qualified for automotive applications.
  • Low on-state resistance down to 3.3mΩ.
  • Continuous drain current of -90A.
  • RoHS compliant and 100% avalanche tested.

IPD90P03P4L-04 Applications

  • Ideal for reverse battery protection.
  • Suitable for automotive powertrain ICs.
  • Used in DC-DC converters.
  • Power management applications.

IPD90P03P4L-04 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage?

-30V

What is the gate threshold voltage?

-1.5V

What is the typical on-state resistance?

3.3mΩ at VGS=-10V, ID=-90A

What is the maximum continuous drain current?

-90A

What is the operating temperature range?

-55°C to +175°C

What package is this MOSFET in?

PG-TO252-3-11

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