Mfr Part #:

IPD90N06S4L-06

Mfr Name: Infineon

The Infineon IPD90N06S4L-06 is an N-channel Power MOSFET with a 60V drain-source breakdown voltage and a maximum Rds(on) of 6.3mΩ at 90A. It is supplied in a PG-TO252-3-11 package.

✓ Total Stock: 27,730 pcs

$ Price Range: $2.40

IPD90N06S4L-06 Available from 3 distributors

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✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	20,000 pcs On Request	20000 pcs	On Request	1	On Request	On Request	2017+	On Request	On Request
Optech Co.,Limited ✓ Non-Authorised Inventory information	6,128 pcs On Request	6128 pcs	On Request	1	On Request	On Request	23+	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	1,602 pcs On Request	1602 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IPD90N06S4L-06 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon
Mounting Type	Surface Mount
Operating Temperature	-55 to +175°C
Power Dissipation	79W
Reverse Recovery Time	39ns
SVHC Present	Not Present

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IPD90N06S4L-06 Description

Short technical summary and product information.

The Infineon IPD90N06S4L-06 is an N-channel enhancement mode power MOSFET from the OptiMOS®-T2 series. It features a drain-source breakdown voltage of 60V and a low on-state resistance, with a maximum of 6.3mΩ at a continuous drain current of 90A (Vgs=10V).

This MOSFET is designed for high-performance applications, offering a continuous drain current of 90A at 25°C case temperature and 63A at 100°C case temperature. It operates over a wide temperature range from -55°C to +175°C and has a maximum power dissipation of 79W at 25°C.

The device is packaged in a PG-TO252-3-11 surface-mount package. Key electrical characteristics include a gate threshold voltage typically around 1.7V and various capacitance values such as input capacitance up to 5680pF and output capacitance up to 1270pF. It also includes a reverse diode with a continuous forward current of 90A.

This component is AEC Q101 qualified and RoHS compliant, making it suitable for demanding automotive and industrial applications where reliability and performance are critical.

IPD90N06S4L-06 Quick Information

Product Type: N-channel Power MOSFET

Series: OptiMOS®-T2

Canonical Name: Infineon IPD90N06S4L-06 N-channel Power MOSFET

Subcategory: N-Channel

IPD90N06S4L-06 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

IPD90N06S4L-06 Estimated Pricing

Qty	Low	High
1+	$2.40	$2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD90N06S4L-06 Features

N-channel enhancement mode MOSFET.
60V drain-source breakdown voltage.
Low Rds(on) of 6.3mΩ at 90A.
175°C operating temperature.
AEC Q101 qualified.

IPD90N06S4L-06 Applications

Suitable for automotive applications.
Ideal for high-current switching.
Power management solutions.
Efficient power conversion circuits.

IPD90N06S4L-06 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage of the IPD90N06S4L-06?

The drain-source breakdown voltage is 60V (minimum).

What is the continuous drain current rating?

The continuous drain current is 90A at Tc=25°C and Vgs=10V, and 63A at Tc=100°C.

What is the drain-source on-resistance?

The typical on-resistance is 5mOhm at Vgs=10V, Id=90A and 7.4mOhm at Vgs=4.5V, Id=45A.

What is the gate threshold voltage range?

The gate threshold voltage is 1.2V minimum, 1.7V typical, and 2.2V maximum at Vds=Vgs, Id=40µA.

What is the operating temperature range?

The operating and storage temperature range is -55°C to +175°C.

What is the package type?

The package is PG-TO252-3-11 (DPAK), surface mount.

What is the total gate charge?

The typical total gate charge is 58.75nC.