| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,764 pcs
|
2764 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation | |
| Reverse Recovery Time |
The Infineon IPD90N06S4-04 is an N-channel OptiMOS®-T2 Power MOSFET. It features a drain-source breakdown voltage of 60V and a continuous drain current of 90A at 25°C case temperature. The device boasts a low on-state resistance (Rds(on)) of up to 3.8 mΩ at a gate-source voltage of 10V and a drain current of 90A.
With an operating temperature range of -55°C to +175°C, this AEC qualified MOSFET is suitable for demanding applications. It is packaged in a PG-TO252-3-11 surface-mount package. Key electrical characteristics include a gate threshold voltage between 2V and 4V, and a total gate charge of 99nC typical.
The IPD90N06S4-04 also includes an integrated reverse diode with a continuous forward current of 90A. Its thermal resistance from junction to case is a low 1.0 K/W, facilitating efficient heat dissipation. The device is RoHS compliant and designed for high reliability.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V minimum at VGS=0V, ID=1mA.
PG-TO252-3-11 surface-mount package.
-55°C to +175°C.
3.8mΩ maximum at VGS=10V, ID=90A.
2V minimum, 3V typical, 4V maximum at VDS=VGS, ID=90µA.
90A at TC=25°C, VGS=10V.
99nC typical, 128nC maximum.