Mfr Part #:

IPD90N04S4L-04

Mfr Name: Infineon

The Infineon IPD90N04S4L-04 is an N-channel OptiMOS®-T2 power MOSFET. It offers a 40V drain-source breakdown voltage and a maximum continuous drain current of 90A.

✓ Total Stock: 6,556 pcs

$ Price Range: $2.40

IPD90N04S4L-04 Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	5,000 pcs On Request	5000 pcs	On Request	1	On Request	On Request	17+	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	1,556 pcs On Request	1556 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IPD90N04S4L-04 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon
Lead Style	Gull Wing
Mounting Type	Surface Mount
Operating Temperature	175 °C
Power Dissipation	71 W
Reverse Recovery Time	39 ns

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IPD90N04S4L-04 Description

Short technical summary and product information.

The Infineon IPD90N04S4L-04 is an N-channel enhancement mode power MOSFET from the OptiMOS®-T2 series. It is designed for high-performance applications, featuring a drain-source breakdown voltage of 40V and a maximum continuous drain current of 90A at 25°C case temperature.

Key electrical characteristics include a low on-state resistance (Rds(on)) of up to 3.8 mΩ at 10V gate-source voltage and 90A drain current, and up to 5.5 mΩ at 4.5V gate-source voltage and 45A drain current. The device also exhibits a gate threshold voltage typically around 1.7V.

With a maximum power dissipation of 71W at 25°C case temperature and an operating temperature range of -55°C to +175°C, this MOSFET is suitable for demanding environments. It is supplied in a PG-TO252-3-313 surface-mount package.

This AEC qualified component is 100% avalanche tested and features a green product compliance, indicating RoHS compatibility. Its thermal resistance from junction to case is a low 2.1 K/W.

IPD90N04S4L-04 Quick Information

Product Type: N-channel Power MOSFET

Series: OptiMOS®-T2

Canonical Name: Infineon IPD90N04S4L-04 N-channel Power MOSFET

Subcategory: N-Channel

IPD90N04S4L-04 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): Level 1

REACH Status: REACH Unaffected

IPD90N04S4L-04 Estimated Pricing

Qty	Low	High
1+	$2.40	$2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD90N04S4L-04 Features

N-channel enhancement mode MOSFET
40V drain-source breakdown voltage
90A maximum continuous drain current
Low Rds(on) up to 3.8 mΩ
PG-TO252-3-313 surface mount package

IPD90N04S4L-04 Applications

Suitable for motor control applications
Designed for high-current switching
Automotive applications supported
Power management solutions

IPD90N04S4L-04 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum continuous drain current for the IPD90N04S4L-04?

The maximum continuous drain current is 90A at a case temperature of 25°C with a gate-source voltage of 10V.

What is the drain-source breakdown voltage of the IPD90N04S4L-04?

The drain-source breakdown voltage is 40V.

What is the typical on-state resistance (Rds(on)) for the IPD90N04S4L-04?

The typical on-state resistance is 3.2 mΩ at a drain current of 90A and a gate-source voltage of 10V.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to +175°C.

What package type is the IPD90N04S4L-04 supplied in?

The IPD90N04S4L-04 is supplied in the PG-TO252-3-313 package.

Is the IPD90N04S4L-04 RoHS compliant?

Yes, the RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the IPD90N04S4L-04?

The Moisture Sensitivity Level is 1 Unlimited.