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IPD90N04S4-05 The Infineon IPD90N04S4-05 is an N-channel Power MOSFET designed for automotive applications. It offers a 40V drain-source breakdown voltage and a continuous drain current of 86A.
Mfr Part #:

IPD90N04S4-05

Available from 2 distributors
Mfr Name: Infineon
Infineon
The Infineon IPD90N04S4-05 is an N-channel Power MOSFET designed for automotive applications. It offers a 40V drain-source breakdown voltage and a continuous drain current of 86A.
✓ Total Stock: 4,602 pcs
$ Price Range: $2.40

IPD90N04S4-05 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
3,000 pcs
On Request
3000 pcs On Request 1 On Request On Request 16+ On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
1,602 pcs
On Request
1602 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IPD90N04S4-05 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Mounting Type
Power Dissipation
Reverse Recovery Time
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IPD90N04S4-05 Description

Short technical summary and product information.

The Infineon IPD90N04S4-05 is an N-channel OptiMOS®-T2 Power MOSFET. It features a 40V drain-source breakdown voltage and a maximum continuous drain current of 86A at 25°C.

 

This MOSFET boasts a low on-state resistance, with a maximum of 5.2 mΩ at 86A and 10V gate-source voltage. It is AEC qualified and operates at temperatures up to 175°C.

 

The device is supplied in a PG-TO252-3-313 surface-mount package. It is suitable for applications requiring high current handling and efficient power switching.

IPD90N04S4-05 Quick Information

Product Type: N-channel Power MOSFET
Series: OptiMOS-T2
Canonical Name: Infineon IPD90N04S4-05 OptiMOS®-T2 Power-Transistor
Subcategory: N-Channel

IPD90N04S4-05 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPD90N04S4-05 Estimated Pricing

Qty Low High
1+ $2.40 $2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD90N04S4-05 Features

  • N-channel enhancement mode MOSFET
  • 40V drain-source breakdown voltage
  • 86A continuous drain current
  • Low Rds(on) of 5.2mΩ max
  • AEC qualified

IPD90N04S4-05 Applications

  • Used in automotive PWM motor control.
  • Ideal for high-current power switching.
  • Suitable for automotive power management.
  • Designed for 40V automotive applications.

IPD90N04S4-05 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage?

The drain-source breakdown voltage is 40V.

What is the typical gate threshold voltage?

The typical gate threshold voltage is 3.0V.

What is the maximum continuous drain current?

The maximum continuous drain current is 86A at 25°C.

What is the maximum drain-source on-state resistance?

The maximum drain-source on-state resistance is 5.2mΩ.

What is the operating temperature range?

The operating temperature range is -55°C to +175°C.

What package is this MOSFET supplied in?

This MOSFET is supplied in a PG-TO252-3-313 package.

Is this MOSFET AEC qualified?

Yes, this MOSFET is AEC qualified.

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