Mfr Part #:

IPD90N04S4-04

The Infineon Technologies IPD90N04S4-04 is an N-channel OptiMOS®-T2 Power-Transistor. It offers a 40V drain-source breakdown voltage and a continuous drain current of 90A.

✓ Total Stock: 33,672 pcs

$ Price Range: $2.40

IPD90N04S4-04 Available from 4 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	21,547 pcs On Request	21547 pcs	On Request	1	On Request	On Request	2021+	On Request	On Request
PROSOFT ELECTRONICS ✓ Non-Authorised Inventory information	10,000 pcs On Request	10000 pcs	On Request	1	On Request	On Request	24+	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	1,874 pcs On Request	1874 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Optech Co.,Limited ✓ Non-Authorised Inventory information	251 pcs On Request	251 pcs	On Request	1	On Request	On Request	22+	On Request	On Request

IPD90N04S4-04 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

SELECT ALL

Category	New Products
Manufacturer Name	Infineon Technologies

View Similar Products (0)

IPD90N04S4-04 Description

Short technical summary and product information.

The Infineon Technologies IPD90N04S4-04 is an N-channel enhancement mode OptiMOS®-T2 Power-Transistor. It is designed for high-performance applications, featuring a drain-source breakdown voltage of 40V and a maximum continuous drain current of 90A at 25°C.

Key electrical characteristics include a typical gate threshold voltage of 3V and a low drain-source on-state resistance of 3.7mΩ at 10V gate-source voltage and 90A drain current. The transistor also exhibits a typical output capacitance of 650pF and a reverse transfer capacitance of 20pF.

This MOSFET operates within a temperature range of -55°C to +175°C and has a thermal resistance from junction to case of 2.1 K/W. It is supplied in a PG-TO252-3-313 package suitable for surface mounting.

The IPD90N04S4-04 is AEC qualified and 100% avalanche tested, making it suitable for demanding applications.

IPD90N04S4-04 Quick Information

Product Type: MOSFET

Series: OptiMOS®-T2

Canonical Name: IPD90N04S4-04 OptiMOS®-T2 Power-Transistor

Subcategory: N-channel Power MOSFET

IPD90N04S4-04 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

IPD90N04S4-04 Estimated Pricing

Qty	Low	High
1+	$2.40	$2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD90N04S4-04 Features

N-channel enhancement mode MOSFET.
40V drain-source breakdown voltage.
90A continuous drain current.
3.7mOhm typical on-state resistance.
PG-TO252-3-313 surface mount package.

IPD90N04S4-04 Applications

Used in DC-DC converter circuits.
Suitable for motor control applications.
Ideal for power management systems.
Applicable in automotive electronics.

IPD90N04S4-04 FAQs

6 frequently asked questions generated from this part’s specifications.

What is the drain-source breakdown voltage?

The drain-source breakdown voltage is 40V.

What is the typical gate threshold voltage?

The typical gate threshold voltage is 3V.

What is the typical drain-source on-state resistance?

The typical drain-source on-state resistance is 3.7mΩ at 10V gate-source voltage and 90A drain current.

What is the maximum continuous drain current?

The maximum continuous drain current is 90A at 25°C case temperature and 10V gate-source voltage.

What package type is the IPD90N04S4-04 in?

The IPD90N04S4-04 is in a PG-TO252-3-313 package.

What is the operating temperature range?

The operating and storage temperature range is -55°C to +175°C.