| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,250 pcs
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3250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation |
The Infineon IPD90N04S4-02 is an N-channel enhancement mode OptiMOS®-T2 Power MOSFET. It is AEC qualified and rated for a maximum operating temperature of 175°C. This device features a drain-source breakdown voltage of 40V and a continuous drain current of 90A at 25°C case temperature.
Key electrical characteristics include a gate threshold voltage typically around 3V and a maximum drain-source on-state resistance of 2.4 mΩ at 10V gate-source voltage and 90A drain current. The device also exhibits low dynamic characteristics with typical input capacitance of 7250pF and output capacitance of 1630pF.
Packaged in a PG-TO252-3-313 surface mount package, the IPD90N04S4-02 is suitable for various power management applications. It also includes an integrated diode with a continuous forward current rating of 90A.
This MOSFET is designed for automotive PWM control and other demanding applications requiring high current and voltage handling capabilities. Its robust construction and performance metrics make it a reliable choice for power electronics designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 40V.
The continuous drain current is 90A.
The typical drain-source on-state resistance is 2.0 mΩ.
The operating and storage temperature range is -55°C to +175°C.
This MOSFET is in a PG-TO252-3-313 package.