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IPD90N03S4L02ATMA1 Infineon IPD90N03S4L02ATMA1 is an N-Channel MOSFET with 30V drain-source breakdown voltage, 90A continuous drain current, and ultra-low 2.2mΩ on-resistance at 10V gate drive. It is AEC Q101 qualified and comes in a PG-TO252-3 surface mount package.
Mfr Part #:

IPD90N03S4L02ATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
Infineon IPD90N03S4L02ATMA1 is an N-Channel MOSFET with 30V drain-source breakdown voltage, 90A continuous drain current, and ultra-low 2.2mΩ on-resistance at 10V gate drive. It is AEC Q101 qualified and comes in a PG-TO252-3 surface mount package.
✓ Total Stock: 2,095 pcs
$ Price Range: $0.73 - $2.74

IPD90N03S4L02ATMA1 Available from 1 distributor

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✓ Non-Authorised
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Components Technology Group, Inc. ✓
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2,095 pcs
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2095 pcs On Request 1 On Request On Request On Request On Request On Request
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IPD90N03S4L02ATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Reverse Recovery Time
Supplier Device Package
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id
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IPD90N03S4L02ATMA1 Description

Short technical summary and product information.

The IPD90N03S4L02ATMA1 is an N-Channel enhancement mode MOSFET from Infineon's OptiMOS-T2 family. It features a 30V drain-source voltage rating and a continuous drain current of 90A at Tc=25°C. The device offers ultra-low on-resistance: 2.2mΩ max at Vgs=10V, Id=90A, and 2.6mΩ max at Vgs=4.5V, Id=45A.

 

This MOSFET is AEC Q101 qualified for automotive applications and is 100% avalanche tested with a single pulse avalanche energy of 240mJ. It operates over a junction temperature range of -55°C to 175°C and is rated for MSL1 (unlimited) moisture sensitivity. The gate threshold voltage is typically 1.5V with a maximum of 2.2V.

 

The device is housed in a PG-TO252-3-11 (DPak) surface mount package with gull-wing leads. It has a maximum power dissipation of 136W at Tc=25°C and a junction-to-case thermal resistance of 1.1 K/W. The input capacitance is 7500pF typical (9750pF max) at 25V drain-source voltage.

IPD90N03S4L02ATMA1 Quick Information

Product Type: N-Channel MOSFET
Series: OptiMOS-T2
Canonical Name: Infineon IPD90N03S4L-02 N-Channel MOSFET, 30V, 90A, TO252-3
Subcategory: N-Channel MOSFET

IPD90N03S4L02ATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

IPD90N03S4L02ATMA1 Estimated Pricing

Qty Low High
1+ $2.74 $2.74
10+ $1.76 $1.76
50+ $1.34 $1.34
100+ $1.20 $1.20
500+ $0.96 $0.96
2,500+ $0.80 $0.80
7,500+ $0.73 $0.73

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD90N03S4L02ATMA1 Features

  • 30V drain-source voltage rating.
  • 90A continuous drain current at 25°C.
  • Ultra-low 2.2mΩ on-resistance at 10V gate drive.
  • AEC Q101 qualified for automotive applications.
  • 100% avalanche tested for reliability.

IPD90N03S4L02ATMA1 Applications

  • Used in automotive power management systems.
  • Ideal for high-current DC-DC converters.
  • Suitable for motor control and load switching.
  • Applicable in battery protection circuits.

IPD90N03S4L02ATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IPD90N03S4L02ATMA1?

The drain-source voltage (Vdss) is 30 V.

What package is the IPD90N03S4L02ATMA1 available in?

The device is available in a PG-TO252-3-11 (DPak) surface mount package.

What is the operating temperature range?

The junction temperature range is -55°C to 175°C.

Is the IPD90N03S4L02ATMA1 RoHS compliant?

Yes, it is RoHS compliant (Green product).

What is the continuous drain current rating?

Continuous drain current is 90 A at Tc=25°C with Vgs=10V.

What is the gate threshold voltage?

Gate threshold voltage is 1.0V min, 1.5V typical, 2.2V max at Id=90µA.

Is this MOSFET AEC qualified?

Yes, it is AEC Q101 qualified for automotive applications.

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