| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,641 pcs
|
5641 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Reverse Recovery Time (trr) | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPD85P04P4L06ATMA1 is a P-Channel logic level enhancement mode MOSFET from Infineon's OptiMOS-P2 series. It is designed for high efficiency power management applications. With a drain-source voltage rating of 40V and a continuous drain current of 85A at 25°C, it offers low on-resistance of 5.3mΩ typical (6.4mΩ max) at Vgs=-10V and 85A. The device features a total gate charge of 104nC and fast switching characteristics with turn-on and turn-off delay times of 17ns and 62ns respectively. The MOSFET is avalanche rated with 30mJ single pulse avalanche energy at 42.5A. It is qualified to AEC standards and operates over a junction temperature range of -55°C to 175°C. The package is a PG-TO252-3-313 (DPak) suitable for surface mount assembly. The device is RoHS compliant and MSL1 rated for 260°C peak reflow. Typical applications include power supplies, motor controls, and automotive systems where high efficiency and low voltage drop are required.
| Qty | Low | High |
|---|---|---|
| 2,500+ | $0.82 | $0.82 |
| 5,000+ | $0.81 | $0.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40V.
PG-TO252-3-313 (DPak).
-55°C to 175°C.
Yes, RoHS3 compliant.
85A at Tc=25°C.
5.3mΩ at Vgs=-10V, Id=-85A.
104nC.