IPD85P04P4L-06 The Infineon IPD85P04P4L-06 is a P-channel MOSFET with a drain-source breakdown voltage of -40V and a continuous drain current of -85A. It features a low on-state resistance and is AEC qualified.
Mfr Part #:

IPD85P04P4L-06

Available from 3 distributors
Mfr Name: Infineon
Infineon
The Infineon IPD85P04P4L-06 is a P-channel MOSFET with a drain-source breakdown voltage of -40V and a continuous drain current of -85A. It features a low on-state resistance and is AEC qualified.
✓ Total Stock: 4,745 pcs
$ Price Range: $2.40

IPD85P04P4L-06 Available from 3 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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2,645 pcs
2645 pcs On Request 1 On Request On Request On Request On Request On Request
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2,000 pcs
2000 pcs On Request 1 On Request On Request 21+ On Request On Request
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100 pcs
100 pcs On Request 1 On Request On Request 18+ On Request On Request

IPD85P04P4L-06 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Halogen Free
Industrial Grade
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation
Reverse Recovery Time

IPD85P04P4L-06 Description

Short technical summary and product information.

The Infineon IPD85P04P4L-06 is a P-channel, logic-level, enhancement-mode MOSFET from the OptiMOS®-P2 family. It is AEC qualified and designed for high-performance applications.

 

Key electrical characteristics include a drain-source breakdown voltage of -40V and a maximum continuous drain current of -85A at 25°C case temperature with a -10V gate-source voltage. The drain-source on-state resistance is as low as 6.4 mΩ at -10V gate-source voltage and -85A drain current.

 

This MOSFET operates at temperatures ranging from -55°C to +175°C and has a power dissipation of 88W at 25°C case temperature. It is packaged in a PG-TO252-3-313 surface-mount package.

 

Features such as 100% avalanche tested and a green package (RoHS compliant) make it suitable for various automotive and industrial applications.

IPD85P04P4L-06 Quick Information

Product Type: MOSFET
Series: OptiMOS®-P2
Canonical Name: Infineon IPD85P04P4L-06 P-channel MOSFET
Subcategory: P-channel

IPD85P04P4L-06 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: No

IPD85P04P4L-06 Estimated Pricing

Qty Low High
1+ $2.40 $2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD85P04P4L-06 Features

  • P-channel logic-level enhancement mode MOSFET.
  • AEC qualified for automotive applications.
  • Maximum drain current of -85A.
  • Low on-state resistance of 6.4 mΩ.
  • Operates up to 175°C.

IPD85P04P4L-06 Applications

  • Suitable for high-side motor bridges.
  • Ideal for automotive power switching.
  • Used in DC-DC converters.
  • Power management applications.

IPD85P04P4L-06 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the IPD85P04P4L-06?

-40 V

What is the typical gate threshold voltage for the IPD85P04P4L-06?

-1.7 V

What is the maximum continuous drain current for the IPD85P04P4L-06?

-85 A

What is the typical drain-source on-state resistance at VGS=-10V and ID=-85A?

5.3 mW

What is the operating temperature range for the IPD85P04P4L-06?

-55 to +175 °C

What package type is the IPD85P04P4L-06 supplied in?

PG-TO252-3-313

Is the IPD85P04P4L-06 RoHS compliant?

RoHS3 Compliant

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