| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,530 pcs
|
1530 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Mounting Type | |
| SVHC Present |
The Infineon Technologies IPD80R900P7 is an 800V CoolMOS P7 series power MOSFET designed for high-performance applications. It features a maximum on-resistance of 0.90 Ohms and a typical gate charge of 15 nC.
This device is recommended for hard and soft switching flyback topologies, including LED lighting, low power chargers and adapters, audio, AUX power, and industrial power supplies. It is also suitable for PFC stages in consumer applications and solar energy systems.
The IPD80R900P7 comes in a PG-TO252-3 package, designed for surface mount applications. Its integrated Zener Diode provides ESD protection, contributing to better production yield and reduced field returns.
Key electrical characteristics include a drain-source voltage of 800V and a typical gate-source threshold voltage of 3V. The device is fully qualified according to JEDEC for Industrial Applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.75 | $0.75 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
800 V.
PG-TO252-3 (surface mount).
0.90 Ω maximum.
6 A typical.
15 nC typical.
Class 2 (HBM).
3 V typical.