| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,300 pcs
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1300 pcs | On Request | 1 | On Request | On Request | 1740+ | On Request | On Request |
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| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Tape & Reel | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPD80R4K5P7 is an N-channel power MOSFET from Infineon Technologies, part of the 800V CoolMOS P7 series. It uses super junction technology and is designed for high-efficiency power conversion. The device is qualified according to JEDEC for industrial applications.
Key ratings include an 800V drain-to-source voltage, 1.5A continuous drain current, and 4.5Ω maximum on-resistance at Vgs = 10V. Typical gate charge is 4nC and input capacitance is 80pF at Vds = 500V. The gate threshold voltage is 3V typical and 3.5V maximum, with a maximum gate-source voltage of ±20V. Power dissipation is 13W at case temperature.
The MOSFET is recommended for hard and soft switching flyback topologies used in LED lighting, low-power chargers and adapters, audio, auxiliary power and industrial power. It is also suitable for power factor correction stages in consumer applications and solar. Its low gate charge and integrated ESD protection simplify driving and improve production yield.
The device is offered in a TO-252-3 (DPAK) surface-mount package with supplier package code PG-TO252-3-341. Operating junction temperature range is -55°C to 150°C.
The maximum drain-to-source voltage is 800V.
The maximum drain current is 1.5A at case temperature (Tc).
The maximum on-resistance is 4.5Ω at Id = 400mA and Vgs = 10V.
The operating junction temperature range is -55°C to 150°C.
The device comes in a TO-252-3 (DPAK) surface-mount package, with supplier package code PG-TO252-3-341.
The part is listed as RoHS3 Compliant in existing source data, though this has not been independently verified.
The typical gate charge is 4nC at Vgs = 10V.