IPD80R2K7C3AATMA1 800V N-Channel MOSFET from Infineon's CoolMOS series. Features 2A continuous drain current, 2.7Ω on-resistance, and AEC Q101 qualification for automotive applications.
Mfr Part #:

IPD80R2K7C3AATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
800V N-Channel MOSFET from Infineon's CoolMOS series. Features 2A continuous drain current, 2.7Ω on-resistance, and AEC Q101 qualification for automotive applications.
✓ Total Stock: 2,500 pcs
$ Price Range: $0.60 - $2.15

IPD80R2K7C3AATMA1 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,500 pcs
2500 pcs On Request 1 On Request On Request 22+ On Request On Request

IPD80R2K7C3AATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPD80R2K7C3AATMA1 Description

Short technical summary and product information.

The IPD80R2K7C3AATMA1 is an 800V N-Channel power MOSFET from Infineon's CoolMOS technology platform. It is designed for high-voltage switching applications, particularly in automotive environments with high DC bulk voltage. The device offers a continuous drain current of 2A at 25°C case temperature and 1.2A at 100°C, with a pulsed current capability of 6A. The typical on-resistance is 2.4Ω at 10V gate drive, with a maximum of 2.7Ω. Gate charge is typically 12nC, enabling efficient switching. The MOSFET is qualified according to AEC Q101, making it suitable for automotive applications. It is housed in a PG-TO252-3 (D-Pak) surface-mount package, with a junction-to-case thermal resistance of 3 K/W. The device is RoHS compliant and halogen-free.

IPD80R2K7C3AATMA1 Quick Information

Product Type: Power MOSFET
Series: CoolMOS C3A
Canonical Name: Infineon IPD80R2K7C3AATMA1 CoolMOS 800V N-Channel MOSFET
Subcategory: N-Channel MOSFET

IPD80R2K7C3AATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

IPD80R2K7C3AATMA1 Estimated Pricing

Qty Low High
1+ $2.15 $2.15
10+ $1.38 $1.38
100+ $0.93 $0.93
500+ $0.76 $0.76
1,000+ $0.69 $0.69
2,500+ $0.61 $0.61
5,000+ $0.60 $0.60

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD80R2K7C3AATMA1 Features

  • 800V drain-source breakdown voltage.
  • 2A continuous drain current rating.
  • Low typical on-resistance of 2.4Ω.
  • AEC Q101 qualified for automotive.
  • Ultra low gate charge of 12nC.

IPD80R2K7C3AATMA1 Applications

  • Suitable for automotive DC-DC converters.
  • Used in active clamp forward topologies.
  • Ideal for high-voltage switching applications.
  • Applicable in power factor correction circuits.

IPD80R2K7C3AATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

800V.

What package is this MOSFET available in?

PG-TO252-3 (D-Pak) surface mount package.

What is the operating temperature range?

-40°C to 150°C junction temperature.

Is this device RoHS compliant?

Yes, RoHS3 compliant with Pb-free lead plating and halogen-free mold compound.

What is the continuous drain current?

2A at 25°C case temperature, 1.2A at 100°C.

What is the typical on-resistance?

2.4Ω at 10V gate drive and 1.2A drain current.

Is this MOSFET qualified for automotive applications?

Yes, it is AEC Q101 qualified.

Home
Account

Categories