| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,500 pcs
|
7500 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request | |
|
1,079 pcs
|
1079 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Input Capacitance | |
| Mounting Type | |
| Power Dissipation | |
| SVHC Present | |
| Tape & Reel |
The Infineon IPD80R2K7C3A is a high-performance CoolMOSTM Power Transistor engineered for demanding automotive applications requiring high DC bulk voltage. This device features a revolutionary high voltage technology and is extreme dv/dt rated, ensuring robust performance.
Key electrical characteristics include a drain-source breakdown voltage of 800V and a maximum drain-source on-state resistance of 2.7W at Tj=25°C. The typical gate charge is 12nC, contributing to efficient switching.
Designed for reliability, the IPD80R2K7C3A is qualified according to AEC Q101. It comes in a green package (RoHS compliant) with Pb-free lead plating and halogen-free mold compound. The transistor is suitable for switching applications such as active clamp forward converters.
The package type is PG-TO252-3, a surface-mount device. Thermal characteristics include a junction-to-case thermal resistance of 3 K/W. The operating temperature range is -40°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source breakdown voltage is 800 V.
The typical gate threshold voltage is 3 V.
The maximum drain-source on-state resistance at Tj=25°C is 2.7 W.
The typical gate charge (Qg,typ) is 12 nC.
The package type is PG-TO252-3.
The operating temperature range is -40°C to 150°C.
Yes, it is RoHS3 Compliant.