Mfr Part #:

IPD80R2K0P7ATMA1

N-Channel MOSFET from Infineon Technologies, rated for 800V drain-source voltage and 3A continuous drain current. Features a low 2 Ohm on-resistance and is housed in a surface-mount TO-252-3 (DPak) package.

✓ Total Stock: 3,520 pcs

$ Price Range: $0.36 - $1.51

IPD80R2K0P7ATMA1 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	3,520 pcs On Request	3520 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IPD80R2K0P7ATMA1 Description

Short technical summary and product information.

The IPD80R2K0P7ATMA1 is an N-channel enhancement mode MOSFET from Infineon Technologies' CoolMOS P7 series. It is designed for high-voltage switching applications with a drain-source voltage rating of 800V and continuous drain current of 3A at 25°C case temperature. The device features a maximum on-resistance of 2 Ohms at 10V gate drive and 940mA drain current, and a typical gate charge of 9 nC.

This MOSFET utilizes superjunction technology to achieve low conduction and switching losses. It is suitable for hard and soft switching flyback topologies in LED lighting, low power chargers, adapters, audio, auxiliary power supplies, and industrial power applications. The device also includes integrated Zener diode ESD protection, rated for Class 1C (HBM).

The IPD80R2K0P7ATMA1 is offered in the surface-mount PG-TO252-3 (DPak) package with a tab for heat dissipation. It has a maximum power dissipation of 24W at 25°C case temperature and an operating junction temperature range of -55°C to 150°C. The device is fully qualified according to JEDEC for industrial applications.

IPD80R2K0P7ATMA1 Quick Information

Product Type: MOSFET

Series: P7

Canonical Name: Infineon Technologies IPD80R2K0P7ATMA1 N-Channel MOSFET, 800V, 3A, TO-252-3

Subcategory: Single MOSFET

IPD80R2K0P7ATMA1 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

IPD80R2K0P7ATMA1 Estimated Pricing

Qty	Low	High
1+	$1.51	$1.51
10+	$0.95	$0.95
50+	$0.71	$0.71
100+	$0.63	$0.63
500+	$0.49	$0.49
2,500+	$0.40	$0.40
7,500+	$0.36	$0.36

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD80R2K0P7ATMA1 Features

800V drain-source voltage rating.
3A continuous drain current capability.
Low 2 Ohm maximum on-resistance.
9 nC typical gate charge.
Surface-mount TO-252-3 DPak package.

IPD80R2K0P7ATMA1 Applications

Ideal for LED lighting flyback converters.
Used in low power chargers and adapters.
Suitable for auxiliary and industrial power supplies.
Applicable for PFC stages in consumer electronics.

IPD80R2K0P7ATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating of the IPD80R2K0P7ATMA1?

800V.

What is the continuous drain current rating?

3A at Tc=25°C.

What is the maximum on-resistance?

2 Ohm at Id=940mA, Vgs=10V.

What is the typical gate charge?

9 nC at Vgs=10V.

What is the operating junction temperature range?

-55°C to 150°C.

What package is the device available in?

Surface-mount TO-252-3 (DPak, PG-TO252-3).

Is the device RoHS compliant?

According to existing data, the device is RoHS3 compliant (unverified).

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Infineon Technologies
Current	3 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	9 nC
Industrial Grade	Yes
Input Capacitance (Ciss) (Max) @ Vds	175 pF
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	24 W
Rds On (Max) @ Id, Vgs	2 Ohm
Storage Temperature	-55.0°C ~ 150.0°C
Supplier Device Package	PG-TO252-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	3.5V