Mfr Part #:

IPD80R1K4P7

Mfr Name: Infineon

The Infineon IPD80R1K4P7 is an 800V N-channel MOSFET from the CoolMOS P7 series. It offers a maximum on-resistance of 1.4 Ohms and a continuous drain current of 4A.

✓ Total Stock: 1,477 pcs

$ Price Range: $2.93

IPD80R1K4P7 Available from 3 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	1,080 pcs On Request	1080 pcs	On Request	1	On Request	On Request	23+	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	380 pcs On Request	380 pcs	On Request	1	On Request	On Request	18+	On Request	On Request
Bristol Electronics ✓ Non-Authorised Inventory information	17 pcs On Request	17 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IPD80R1K4P7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon
Gate Charge	10 nC
Lead Style	Gull Wing
Mounting Type	Surface Mount
Storage Temperature	-55°C ~ 150°C

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IPD80R1K4P7 Description

Short technical summary and product information.

The Infineon IPD80R1K4P7 is a high-performance N-channel Power MOSFET belonging to the 800V CoolMOS P7 series. This series sets a new benchmark in 800V super junction technologies, combining best-in-class performance with ease of use.

Key electrical specifications include a maximum Drain-Source Voltage (Vds) of 800V and a maximum On-Resistance (Rds(on)) of 1.4 Ohms. The typical Gate Charge (Qg) is 10 nC, and it can handle a continuous Drain Current (ID) of 4A. The device also features a typical Gate-Source Threshold Voltage (Vgs(th)) of 3V and an energy loss (Eoss) of 0.9 µJ at 500V.

This MOSFET is designed for applications such as LED lighting, low-power chargers and adapters, audio power supplies, and industrial power. It is also suitable for PFC stages in consumer applications and solar power systems. The integrated Zener Diode provides ESD protection, and the device is fully qualified according to JEDEC for Industrial Applications.

The IPD80R1K4P7 is supplied in a PG-TO252-3 surface mount package.

IPD80R1K4P7 Quick Information

Product Type: MOSFET

Series: CoolMOS P7

Canonical Name: IPD80R1K4P7 800V CoolMOS P7 Power Device MOSFET

Subcategory: N-Channel Power MOSFET

IPD80R1K4P7 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Yes

IPD80R1K4P7 Estimated Pricing

Qty	Low	High
1+	$2.93	$2.93

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD80R1K4P7 Features

800V breakdown voltage rating.
1.4 Ohm maximum on-resistance.
4A continuous drain current.
Integrated ESD protection diode.
TO-252 surface mount package.

IPD80R1K4P7 Applications

Suitable for LED lighting applications.
Used in low-power chargers and adapters.
Applicable for industrial power supplies.
Can be used in PFC stages.
Designed for solar power systems.

IPD80R1K4P7 FAQs

6 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage for the IPD80R1K4P7 MOSFET?

The maximum drain-source voltage (Vds) at Tj=25°C is 800V.

What is the maximum on-resistance of the IPD80R1K4P7?

The maximum on-resistance (Rds(on)) is 1.4 Ohms.

What is the typical gate charge for this MOSFET?

The typical gate charge (Qg) is 10 nC.

What is the continuous drain current rating?

The continuous drain current (ID) is 4A.

What is the typical gate-source threshold voltage?

The typical gate-source threshold voltage (Vgs(th)) is 3V.

What package type is the IPD80R1K4P7 MOSFET supplied in?

The MOSFET is supplied in a PG-TO252-3 package.