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IPD80P03P4L-07 The Infineon IPD80P03P4L-07 is a P-channel Logic Level Power MOSFET designed for high-performance applications. It offers a continuous drain current of -80A and a breakdown voltage of -30V.
Mfr Part #:

IPD80P03P4L-07

Available from 1 distributors
Mfr Name: Infineon
Infineon
The Infineon IPD80P03P4L-07 is a P-channel Logic Level Power MOSFET designed for high-performance applications. It offers a continuous drain current of -80A and a breakdown voltage of -30V.
✓ Total Stock: 2,580 pcs
$ Price Range: $2.40

IPD80P03P4L-07 Available from 1 distributor

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✓ Non-Authorised
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Xingangxin ✓
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2,580 pcs
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IPD80P03P4L-07 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Input Capacitance
Lead Style
Mounting Type
Operating Temperature
Power Dissipation
Reverse Recovery Time
SVHC Present
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IPD80P03P4L-07 Description

Short technical summary and product information.

The Infineon IPD80P03P4L-07 is a P-channel, logic-level, enhancement-mode power MOSFET from the OptiMOS®-P2 family. It is AEC qualified and designed for demanding applications requiring high efficiency and reliability.

 

Key electrical characteristics include a continuous drain current of -80A at 25°C and a drain-source breakdown voltage of -30V. The device features a low on-state resistance, with RDS(on) as low as 6.8 mΩ at VGS=-10V and ID=-80A, and 12 mΩ at VGS=-4.5V and ID=-40A. Its operating temperature range is -55°C to +175°C.

 

The MOSFET is supplied in a PG-TO252-3-11 surface-mount package. It is intended for reverse battery protection and offers 100% avalanche tested for enhanced robustness.

IPD80P03P4L-07 Quick Information

Product Type: Power MOSFET
Series: OptiMOS®-P2
Canonical Name: Infineon IPD80P03P4L-07 P-channel Logic Level Power MOSFET
Subcategory: P-channel Power MOSFET

IPD80P03P4L-07 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPD80P03P4L-07 Estimated Pricing

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1+ $2.40 $2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD80P03P4L-07 Features

  • P-channel logic level enhancement mode MOSFET.
  • Continuous drain current of -80A at 25°C.
  • Drain-source breakdown voltage of -30V.
  • Low on-state resistance down to 6.8 mΩ.
  • AEC qualified and 100% avalanche tested.

IPD80P03P4L-07 Applications

  • Suitable for reverse battery protection.
  • Designed for high-efficiency power switching.
  • Ideal for automotive applications.
  • Used in power management circuits.

IPD80P03P4L-07 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the IPD80P03P4L-07?

The minimum drain-source breakdown voltage is -30V.

What is the continuous drain current rating?

The continuous drain current is -80A at TC=25°C with VGS=-10V.

What is the on-state resistance at VGS=-10V?

The maximum drain-source on-state resistance is 6.8 mΩ at VGS=-10V, ID=-80A.

What is the gate threshold voltage?

The typical gate threshold voltage is -1.5V at VDS=VGS, ID=-130µA.

What is the operating temperature range?

The operating and storage temperature range is -55 to +175°C.

What is the package type?

The package is PG-TO252-3-11.

What is the power dissipation rating?

The power dissipation is 88W at TC=25°C.

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