| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
11,631 pcs
|
11631 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request | |
|
1,738 pcs
|
1738 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
10 pcs
|
10 pcs | On Request | 1 | On Request | On Request | NO DC | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Reverse Recovery Time | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
IPD80N04S3-06 is an N-channel enhancement-mode power MOSFET in the OptiMOS-T family from Infineon Technologies. It is designed for automotive applications and is AEC Q101 qualified. The device features a drain-source breakdown voltage of 40 V and a continuous drain current of 90 A at Tc=25°C (71 A at Tc=100°C). Maximum on-state resistance is 5.2 mΩ at Vgs=10 V and Id=80 A, with a typical value of 4.1 mΩ. The total gate charge is 47 nC maximum, supporting efficient high-frequency switching.
This MOSFET provides maximum power dissipation of 100 W at Tc=25°C and operates over a junction temperature range of -55°C to 175°C. The device is RoHS compliant (RoHS3) and has an MSL1 rating, allowing unlimited floor life with peak reflow temperatures up to 260°C.
The IPD80N04S3-06 comes in a surface-mount TO-252-3 (DPak) package, identified as PG-TO252-3-11. This compact package suits space-constrained designs in automotive power systems, DC-DC converters, motor control, and high-current load-switching applications. The low on-resistance and high current capability make it a good choice for power management circuits.
| Qty | Low | High |
|---|---|---|
| 2,500+ | $0.92 | $0.92 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 40V. The maximum gate-source voltage is ±20V.
The device is offered in a TO-252-3 (DPak) surface-mount package (PG-TO252-3-11).
The junction operating temperature range is -55°C to 175°C.
Yes, the part is RoHS3 compliant according to the datasheet.
90A at Tc=25°C and 71A at Tc=100°C with Vgs=10V.
Maximum 5.2mΩ at Vgs=10V and Id=80A; typical is 4.1mΩ.
Yes, it is AEC Q101 qualified and has a 175°C operating temperature.