IPD78CN10NGATMA1 N-channel power MOSFET from Infineon with 100V drain-source voltage, 13A continuous drain current, and 78mΩ max on-resistance. Housed in a surface-mount TO-252-3 (DPak) package.
Mfr Part #:

IPD78CN10NGATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-channel power MOSFET from Infineon with 100V drain-source voltage, 13A continuous drain current, and 78mΩ max on-resistance. Housed in a surface-mount TO-252-3 (DPak) package.
✓ Total Stock: 11,020 pcs
$ Price Range: $0.30 - $1.11

IPD78CN10NGATMA1 Available from 1 distributor

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✓ Non-Authorised
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IPD78CN10NGATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPD78CN10NGATMA1 Description

Short technical summary and product information.

The Infineon IPD78CN10NGATMA1 is a single N-channel power MOSFET built on OptiMOS2 technology, offering a drain-source voltage of 100V and continuous drain current of 13A at 25°C (9A at 100°C). It features a low typical on-resistance of 59mΩ (78mΩ maximum) at VGS=10V. Dynamic characteristics include a typical input capacitance of 538pF, total gate charge of 8nC, and fast switching times with turn-on delay of 9ns and fall time of 3ns. The device is rated for avalanche energy of 17mJ and supports operating junction temperatures from -55°C to 175°C.

 

The MOSFET is designed for high-frequency switching and synchronous rectification applications. It is qualified according to JEDEC standards and is RoHS compliant with halogen-free construction according to IEC61249-2-21. The part is offered in a PG-TO252-3 surface-mount package (DPak) with Pb-free lead plating. Thermal resistance is 4.9 K/W junction-to-case and 75 K/W junction-to-ambient (minimal footprint).

IPD78CN10NGATMA1 Quick Information

Product Type: N-Channel Power MOSFET
Series: OptiMOS2
Canonical Name: Infineon Technologies IPD78CN10NGATMA1 N-Channel MOSFET
Subcategory: Transistors - FETs, MOSFETs - Single

IPD78CN10NGATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

IPD78CN10NGATMA1 Estimated Pricing

Qty Low High
1+ $1.11 $1.11
10+ $0.69 $0.69
100+ $0.45 $0.45
500+ $0.39 $0.39
1,000+ $0.36 $0.36
2,500+ $0.32 $0.32
5,000+ $0.31 $0.31
10,000+ $0.31 $0.31
25,000+ $0.30 $0.30

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD78CN10NGATMA1 Features

  • N-channel OptiMOS2 power MOSFET technology.
  • 100V drain-source breakdown voltage.
  • 13A continuous drain current rating.
  • Low 78mΩ maximum on-resistance.
  • Wide operating temperature range -55°C to 175°C.

IPD78CN10NGATMA1 Applications

  • High-frequency switching power supplies.
  • Synchronous rectification circuits.
  • DC-DC converter topologies.
  • Motor control and automotive applications.

IPD78CN10NGATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage of the IPD78CN10NGATMA1?

The drain-source voltage (VDS) is 100V nominal, with a breakdown voltage minimum of 100V.

What package type is the IPD78CN10NGATMA1?

The package is PG-TO252-3, equivalent to TO-252-3 (DPak), surface mount.

What is the operating temperature range of this MOSFET?

The operating junction temperature range is -55°C to 175°C.

Is the IPD78CN10NGATMA1 RoHS compliant?

Yes, the datasheet confirms RoHS3 compliance and Pb-free lead plating.

What is the continuous drain current at 25°C?

The continuous drain current is 13A at Tc=25°C and 9A at Tc=100°C.

What is the typical gate charge of this MOSFET?

Typical total gate charge is 8 nC at VGS=10V.

What is the maximum on-resistance at VGS=10V?

The maximum drain-source on-resistance is 78 mΩ at VGS=10V, ID=13A.

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