| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,744 pcs
|
5744 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request | |
|
1,623 pcs
|
1623 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPD75N04S406 is an N-Channel enhancement mode power MOSFET from Infineon Technologies, built with MOSFET (Metal Oxide) technology. It is designed for high-efficiency power management applications requiring a 40V drain-to-source voltage rating and a continuous drain current of 75A.
Key electrical characteristics include a maximum on-resistance of 5.9mOhm at 75A and 10V gate drive, a typical gate charge of 32nC at 10V, and an input capacitance of 2550pF at 25V drain-source voltage. The device has a maximum gate threshold voltage of 4V at 26µA drain current and supports a gate-source voltage range of ±20V.
The MOSFET is housed in a surface mount PG-TO252-3-313 package (DPak/TO-252-3), offering a compact footprint for automated assembly. It can dissipate up to 58W of power at case temperature and operates over a junction temperature range of -55°C to 175°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.51 | $1.51 |
| 10+ | $0.95 | $0.95 |
| 100+ | $0.63 | $0.63 |
| 500+ | $0.50 | $0.50 |
| 1,000+ | $0.45 | $0.45 |
| 2,500+ | $0.40 | $0.40 |
| 5,000+ | $0.37 | $0.37 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 40 V.
The maximum continuous drain current is 75 A at case temperature (Tc).
The maximum on-resistance (Rds(on)) is 5.9 mOhm at a drain current of 75 A and gate-source voltage of 10 V.
The operating junction temperature range is -55°C to 175°C.
The device is available in a surface mount PG-TO252-3-313 package, which is a TO-252-3, DPak (2 Leads + Tab), SC-63.
The maximum gate charge (Qg) is 32 nC at a gate-source voltage of 10 V.
The maximum input capacitance (Ciss) is 2550 pF at a drain-source voltage of 25 V.