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IPD70R900P7S Infineon IPD70R900P7S is a 700V N-Channel CoolMOS P7 power MOSFET in a PG-TO 252-3 surface-mount package. Key specs: 0.9Ω maximum on-resistance, 6.8nC typical gate charge, and 12.8A pulsed drain current.
Mfr Part #:

IPD70R900P7S

Available from 2 distributors
Mfr Name: Infineon
Infineon
Infineon IPD70R900P7S is a 700V N-Channel CoolMOS P7 power MOSFET in a PG-TO 252-3 surface-mount package. Key specs: 0.9Ω maximum on-resistance, 6.8nC typical gate charge, and 12.8A pulsed drain current.
✓ Total Stock: 10,735 pcs

IPD70R900P7S Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
7,500 pcs
On Request
7500 pcs On Request 1 On Request On Request 19+ On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
3,235 pcs
On Request
3235 pcs On Request 1 On Request On Request On Request On Request On Request
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IPD70R900P7S Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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IPD70R900P7S Description

Short technical summary and product information.

The Infineon IPD70R900P7S is a 700V N-Channel power MOSFET from the CoolMOS P7 family, designed for high-efficiency power conversion. It features a maximum drain-source voltage of 700V at Tj=25°C and a low on-resistance of 0.9Ω, minimizing conduction losses. The device offers a typical gate charge of 6.8nC, enabling fast switching and reduced driver losses. It can handle a pulsed drain current of up to 12.8A and has an output capacitance energy (Eoss) of 0.9µJ at 400V. The typical gate threshold voltage is 3V, and the device is rated ESD Class 1C (HBM).

 

The MOSFET is housed in a PG-TO 252-3 (DPAK) surface-mount package, suitable for automated assembly. The CoolMOS P7 technology is optimized for applications requiring high efficiency and reliability, such as switched-mode power supplies, adapters, and lighting. The low gate charge and fast switching characteristics make it ideal for high-frequency designs.

IPD70R900P7S Quick Information

Product Type: Power MOSFET
Series: P7
Canonical Name: IPD70R900P7S CoolMOS P7 Power MOSFET
Subcategory: N-Channel

IPD70R900P7S Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPD70R900P7S Features

  • 700V maximum drain-source voltage rating.
  • 0.9Ω maximum on-resistance for low conduction loss.
  • 6.8nC typical gate charge for fast switching.
  • 12.8A pulsed drain current capability.
  • Surface-mount PG-TO 252-3 package.

IPD70R900P7S Applications

  • Suitable for high-efficiency switched-mode power supplies.
  • Ideal for AC-DC adapters and chargers.
  • Used in LED lighting power conversion stages.
  • Applicable in telecom and server power systems.

IPD70R900P7S FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IPD70R900P7S?

The maximum drain-source voltage (Vds) is 700V at Tj=25°C.

What is the on-resistance of the IPD70R900P7S?

The maximum on-resistance (Rds(on)) is 0.9Ω.

What is the typical gate charge of the IPD70R900P7S?

The typical gate charge (Qg) is 6.8nC.

What package does the IPD70R900P7S come in?

The device is housed in a PG-TO 252-3 surface-mount package.

What is the pulsed drain current rating of the IPD70R900P7S?

The maximum pulsed drain current (Id,pulse) is 12.8A.

What is the ESD classification of the IPD70R900P7S?

The ESD class (HBM) is 1C.

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