IPD70R600P7S The Infineon IPD70R600P7S is a 700V N-channel power MOSFET from the CoolMOS P7 series. It features low losses and excellent thermal behavior, making it suitable for cost-sensitive applications.
Mfr Part #:

IPD70R600P7S

Available from 3 distributors
Mfr Name: Infineon
Infineon
The Infineon IPD70R600P7S is a 700V N-channel power MOSFET from the CoolMOS P7 series. It features low losses and excellent thermal behavior, making it suitable for cost-sensitive applications.
✓ Total Stock: 22,940 pcs
$ Price Range: $1.67

IPD70R600P7S Available from 3 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
13,284 pcs
13284 pcs On Request 1 On Request On Request 20+ On Request On Request
Non-Authorised Inventory information
8,579 pcs
8579 pcs On Request 1 On Request On Request 19 On Request On Request
Non-Authorised Inventory information
1,077 pcs
1077 pcs On Request 1 On Request On Request On Request On Request On Request

IPD70R600P7S Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Gate Charge
Industrial Grade
Lead Spacing
Medical Grade
Military Grade
Mounting Type

IPD70R600P7S Description

Short technical summary and product information.

The Infineon IPD70R600P7S is a 700V N-channel power MOSFET utilizing Infineon's CoolMOS P7 technology. This technology is based on the superjunction principle and is designed for high-voltage power MOSFETs, offering an optimized platform for cost-sensitive consumer markets.

 

The MOSFET provides benefits such as extremely low losses due to a low Figure of Merit (FOM) of RDS(on)*Qg and RDS(on)*Eoss, excellent thermal behavior, and integrated ESD protection. It boasts low switching losses (Eoss) and product validation according to JEDEC standards.

 

Key electrical parameters include a maximum Drain-Source Voltage (VDS) of 700V at 25°C, a maximum On-Resistance (RDS(on)) of 0.6 Ohms, a typical Gate Charge (Qg) of 10.5 nC, and a typical Gate Threshold Voltage (VGS(th)) of 3V. The pulsed drain current (ID,pulse) is 20.5A, and Eoss at 400V is 1.2 µJ. The ESD class (HBM) is 2.

 

This component is recommended for Flyback topologies and is commonly used in applications such as chargers, adapters, and lighting. It is supplied in a PG-TO 252-3 package suitable for surface mounting.

IPD70R600P7S Quick Information

Product Type: MOSFET
Series: CoolMOS P7
Canonical Name: Infineon IPD70R600P7S N-channel Power MOSFET
Subcategory: Power MOSFET

IPD70R600P7S Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPD70R600P7S Estimated Pricing

Qty Low High
1+ $1.67 $1.67

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD70R600P7S Features

  • 700V Drain-Source Voltage rating.
  • 0.6 Ohm maximum On-Resistance.
  • 10.5 nC typical Gate Charge.
  • Low switching losses (Eoss).
  • TO-252-3 surface mount package.

IPD70R600P7S Applications

  • High-voltage power switching circuits
  • Motor control and drives
  • Power conversion applications
  • High-voltage switching modules

IPD70R600P7S FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum Drain-Source Voltage for the IPD70R600P7S?

The maximum Drain-Source Voltage (VDS) at Tj=25°C is 700V.

What is the maximum On-Resistance of the IPD70R600P7S?

The maximum On-Resistance (RDS(on)) is 0.6 Ohms.

What is the typical Gate Charge for this MOSFET?

The typical Gate Charge (Qg) is 10.5 nC.

What package type is the IPD70R600P7S supplied in?

It is supplied in a PG-TO 252-3 package.

What is the RoHS status of the IPD70R600P7S?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this component?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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