Mfr Part #:

IPD70R360P7S

Mfr Name: Infineon

The Infineon IPD70R360P7S is a 700V N-channel CoolMOS P7 power MOSFET. It offers low losses and high power density, suitable for cost-sensitive applications.

✓ Total Stock: 6,945 pcs

$ Price Range: $0.99

IPD70R360P7S Available from 4 distributors

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✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	4,640 pcs On Request	4640 pcs	On Request	1	On Request	On Request	19+	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	1,050 pcs On Request	1050 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Braun Electronic Components ✓ Non-Authorised Inventory information	1,000 pcs On Request	1000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Optech Co.,Limited ✓ Non-Authorised Inventory information	255 pcs On Request	255 pcs	On Request	1	On Request	On Request	21+	On Request	On Request

IPD70R360P7S Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon
Gate Charge	16.4nC
Lead Style	Gull-Wing
Mounting Type	Surface Mount

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IPD70R360P7S Description

Short technical summary and product information.

The Infineon IPD70R360P7S is a 700V N-channel power MOSFET from the CoolMOS P7 series. This technology is designed according to the superjunction principle, offering benefits like fast switching and an excellent price/performance ratio.

Key electrical specifications include a maximum On-Resistance (RDS(on)) of 0.36Ω, a typical Gate Charge (Qg) of 16.4nC, and a pulse drain current (ID,pulse) of 34A. The device also features low switching losses (Eoss) and integrated ESD protection.

This MOSFET is recommended for Flyback topologies and is suitable for applications such as chargers, adapters, and lighting. It is packaged in a PG-TO 252-3 surface mount package, enabling high power density and slim designs.

IPD70R360P7S Quick Information

Product Type: N-channel Power MOSFET

Series: CoolMOS P7

Canonical Name: Infineon IPD70R360P7S N-channel Power MOSFET

Subcategory: N-channel

IPD70R360P7S Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

IPD70R360P7S Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD70R360P7S Features

700V Drain-Source Voltage rating.
0.36Ω maximum On-Resistance.
16.4nC typical Gate Charge.
34A pulse drain current.
TO-252 surface mount package.

IPD70R360P7S Applications

Suitable for charger applications.
Ideal for adapter power supplies.
Used in lighting applications.
Supports Flyback topologies.

IPD70R360P7S FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating of the IPD70R360P7S?

The drain-source voltage rating is 700V at Tj=25°C.

What is the maximum on-resistance of the IPD70R360P7S?

The maximum on-resistance is 0.36Ω.

What is the typical gate charge of the IPD70R360P7S?

The typical gate charge is 16.4nC.

What is the pulsed drain current rating of the IPD70R360P7S?

The pulsed drain current rating is 34A.

What is the package type of the IPD70R360P7S?

The package type is PG-TO 252-3, which is a surface-mount package.

What is the typical gate threshold voltage of the IPD70R360P7S?

The typical gate threshold voltage is 3V.

What is the ESD class of the IPD70R360P7S?

The ESD class is 2 (HBM).