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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IPD70R1K4P7S is a 700V N-channel power MOSFET from the CoolMOS P7 series. This technology is designed for high voltage power MOSFETs using the superjunction principle, offering an optimized platform for cost-sensitive applications.
Key electrical specifications include a maximum Drain-Source Voltage (Vds) of 700V at 25°C, a maximum On-Resistance (RDS(on)) of 1.4Ω, and a typical Gate Charge (Qg) of 4.7nC. It also features a pulsed drain current of 8.2A and output capacitance (Eoss) of 0.6µJ at 400V. The typical Gate Threshold Voltage (Vgs(th)) is 3V, and it has an ESD class of 1C (HBM).
This MOSFET is recommended for Flyback topologies and is suitable for applications such as chargers, adapters, and lighting. It comes in a PG-TO 252-3 surface mount package, enabling high power density designs and small form factors. The technology provides benefits like extremely low losses and high ESD ruggedness.
The CoolMOS P7 series is designed to meet high efficiency standards and supports high power density, enabling customers to achieve very slim designs. It offers a cost-competitive technology with lower operating temperatures and high switching frequencies.
The maximum Drain-Source Voltage (Vds) is 700V at 25°C.
The maximum On-Resistance (Rds(on)) is 1.4Ω.
The typical Gate Charge (Qg) is 4.7nC.
The IPD70R1K4P7S is supplied in a PG-TO 252-3 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.