| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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61 pcs
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61 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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| Halogen Free | |
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| Tape & Reel | |
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IPD70R1K4CEAUMA1 is a 700V N-channel power MOSFET from Infineon Technologies' CoolMOS CE family. It is designed according to the superjunction (SJ) principle, combining high efficiency with cost-effective performance for consumer and lighting applications. The device is qualified for standard-grade applications and uses Pb-free plating and halogen-free mold compound.
The MOSFET features a drain-to-source voltage rating of 700V and a continuous drain current of 5.4A at Tc=25°C. Maximum on-resistance is 1.4Ω at Vgs=10V and Id=1A, with a recommended gate drive voltage of 10V. Total gate charge is 10.5nC and maximum input capacitance is 225pF at Vds=100V, making the device suitable for fast-switching power circuits.
The IPD70R1K4CEAUMA1 is provided in a TO-252-3 (DPAK) surface-mount package (PG-TO252-3), which supports compact PCB assembly. Maximum power dissipation is 53W at a case temperature of 25°C, and the junction operating temperature range is -40°C to +150°C.
Typical applications include power adapters, LCD and PDP TVs, and indoor lighting systems where high efficiency and low system cost are required.
The maximum drain-source voltage (Vdss) is 700V.
The continuous drain current is 5.4A at a case temperature of 25°C.
The junction temperature range is -40°C to +150°C.
It comes in the TO-252-3 (DPAK) surface-mount package, also designated PG-TO252-3.
The maximum on-resistance is 1.4 ohms at Vgs=10V and Id=1A.
Existing data lists it as RoHS3 compliant, though this status is not independently verified.
Maximum power dissipation is 53W at a case temperature of 25°C.