| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,054 pcs
|
1054 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | 2021+ | On Request | On Request |
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The Infineon IPD70P04P4L-08 is a P-channel Power MOSFET from the OptiMOS®-P2 family. Designed for automotive applications, it features logic-level gate drive and enhancement mode operation.
Key electrical characteristics include a drain-source breakdown voltage of -40V. The drain-source on-state resistance is as low as 6.4 mΩ typical at VGS=-10V and ID=-70A, and 9.5 mΩ typical at VGS=-4.5V and ID=-40A. It operates with a gate source voltage range of +5V to -16V.
This MOSFET is AEC qualified and rated for a continuous drain current of -70A at 25°C case temperature. It can withstand a junction temperature range of -55°C to +175°C. The device is supplied in a PG-TO252-3-313 package, suitable for surface mounting.
Features like 100% avalanche tested and a green package (RoHS compliant) are highlighted. The operating temperature is up to 175°C, and it is rated for MSL1 up to 260°C peak reflow.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-40 V
-1.7 V
6.4 mΩ
-70 A
175 °C
PG-TO252-3-313
RoHS3 Compliant