| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,000 pcs
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10000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Reverse Recovery Time | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPD70N12S3-11 is an N-channel enhancement mode power MOSFET from Infineon's OptiMOS-T series, designed for automotive applications. This device is AEC Q101 qualified and offers a drain-source breakdown voltage of 120V with a continuous drain current of 70A at 25°C case temperature. The maximum on-state resistance is 11.1mΩ at VGS=10V and ID=70A, ensuring high efficiency in power conversion circuits.
The device exhibits fast switching performance with typical turn-on delay of 17ns and rise time of 8ns. Total gate charge is 51nC typical, contributing to reduced switching losses. Key capacitance values include input capacitance of 3350pF and output capacitance of 940pF typical at VDS=25V.
The IPD70N12S3-11 is available in a PG-TO252-3-11 surface mount package (TO-252-3, DPak). It operates over a junction temperature range of -55°C to 175°C, with thermal resistance junction-to-case of 1.2 K/W. The device is RoHS3 compliant and MSL1 rated up to 260°C peak reflow temperature.
Applications include automotive power management, DC-DC converters, motor control, and high-current switching power supplies. Avalanche energy capability of 410mJ provides robustness in harsh environments.
The minimum drain-source breakdown voltage is 120V at VGS=0V, ID=1mA.
The device is available in a PG-TO252-3-11 surface mount package (TO-252-3, DPak).
The junction operating temperature range is -55°C to 175°C.
Yes, the device is RoHS3 compliant as per the datasheet.
Yes, it is AEC Q101 qualified.
The gate threshold voltage ranges from 2.0V minimum to 4.0V maximum, with a typical value of 3.0V at VDS=VGS and ID=83µA.