IPD70N10S3L12ATMA1 N-Channel MOSFET from Infineon Technologies. 100V drain-source breakdown voltage, 70A continuous drain current, surface mount TO252-3 package.
Mfr Part #:

IPD70N10S3L12ATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET from Infineon Technologies. 100V drain-source breakdown voltage, 70A continuous drain current, surface mount TO252-3 package.
✓ Total Stock: 7,136 pcs
$ Price Range: $1.24 - $3.21

IPD70N10S3L12ATMA1 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
7,136 pcs
7136 pcs On Request 1 On Request On Request 22+ On Request On Request

IPD70N10S3L12ATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Reverse Recovery Time
Storage Temperature
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPD70N10S3L12ATMA1 Description

Short technical summary and product information.

The IPD70N10S3L12ATMA1 is an N-Channel enhancement mode MOSFET from Infineon Technologies, part of the OptiMOS-T power transistor family. It features a drain-source breakdown voltage of 100V and a maximum continuous drain current of 70A at case temperature 25°C.

 

Key electrical characteristics include a low on-state resistance of 11.5 mΩ maximum at Vgs=10V and Id=70A, and gate threshold voltage ranging from 1.2V typical to 2.4V maximum. The device offers fast switching with typical turn-on delay of 12ns and rise time of 6ns under specified conditions.

 

The MOSFET is housed in a PG-TO252-3-11 surface mount package and supports operating junction temperatures from -55°C to 175°C. It is automotive AEC Q101 qualified and RoHS compliant.

IPD70N10S3L12ATMA1 Quick Information

Product Type: MOSFET
Series: OptiMOS-T
Canonical Name: IPD70N10S3L12ATMA1 N-Channel MOSFET
Subcategory: Single MOSFET

IPD70N10S3L12ATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

IPD70N10S3L12ATMA1 Estimated Pricing

Qty Low High
1+ $3.21 $3.21
2,500+ $1.24 $1.24

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD70N10S3L12ATMA1 Features

  • 100V drain-source breakdown voltage.
  • 70A continuous drain current capacity.
  • 11.5mΩ on-resistance at 10V gate drive.
  • AEC Q101 qualified automotive MOSFET.
  • RoHS compliant with MSL 1 rating.

IPD70N10S3L12ATMA1 Applications

  • Used in automotive power switching circuits.
  • Suitable for DC-DC converter applications.
  • Ideal for load switching in industrial controls.
  • Applicable to motor control and drive stages.

IPD70N10S3L12ATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IPD70N10S3L12ATMA1?

The drain-source breakdown voltage is 100V.

What package is the IPD70N10S3L12ATMA1 available in?

It is available in a surface-mount TO-252-3 (DPak) package with supplier package code PG-TO252-3-11.

What is the operating temperature range?

The junction temperature range is -55°C to 175°C.

Is the device RoHS compliant?

Yes, it is RoHS3 compliant.

What is the continuous drain current at 25°C?

The continuous drain current is 70A at Tc=25°C, and 48A at Tc=100°C.

What is the on-state resistance at a gate-source voltage of 10V?

The maximum on-state resistance is 11.5mΩ (typically 9.6mΩ) at Vgs=10V and Id=70A.

Is the MOSFET qualified for automotive applications?

Yes, it is Automotive AEC Q101 qualified.

Home
Account

Categories