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IPD70N10S3L-12 The Infineon IPD70N10S3L-12 is an N-channel MOSFET designed for automotive applications. It features a 100V drain-source breakdown voltage and a continuous drain current of 70A.
Mfr Part #:

IPD70N10S3L-12

Available from 3 distributors
Mfr Name: Infineon
Infineon
The Infineon IPD70N10S3L-12 is an N-channel MOSFET designed for automotive applications. It features a 100V drain-source breakdown voltage and a continuous drain current of 70A.
✓ Total Stock: 6,855 pcs
$ Price Range: $1.67

IPD70N10S3L-12 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
4,351 pcs
On Request
4351 pcs On Request 1 On Request On Request 16+ On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
1,718 pcs
On Request
1718 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
786 pcs
On Request
786 pcs On Request 1 On Request On Request 15+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IPD70N10S3L-12 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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IPD70N10S3L-12 Description

Short technical summary and product information.

The Infineon IPD70N10S3L-12 is an N-channel enhancement mode power MOSFET from the OptiMOS™-T family. It is automotive AEC Q101 qualified and designed for high-reliability applications.

 

Key electrical specifications include a drain-source breakdown voltage of 100V and a continuous drain current of 70A at 25°C case temperature. The on-state resistance (Rds(on)) is as low as 9.6 mΩ typical at VGS=10V and ID=70A. The device operates at temperatures up to 175°C.

 

This MOSFET is supplied in a PG-TO252-3-11 package, suitable for surface mounting. Its features make it suitable for applications such as 48V inverters and DC-DC converters in automotive systems.

IPD70N10S3L-12 Quick Information

Product Type: MOSFET
Series: OptiMOS™-T
Canonical Name: Infineon IPD70N10S3L-12 N-channel MOSFET
Subcategory: N-Channel Power MOSFET

IPD70N10S3L-12 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPD70N10S3L-12 Estimated Pricing

Qty Low High
1+ $1.67 $1.67

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD70N10S3L-12 Features

  • Automotive AEC Q101 qualified.
  • N-channel enhancement mode MOSFET.
  • 100V drain-source breakdown voltage.
  • 70A continuous drain current.
  • 175°C maximum operating temperature.

IPD70N10S3L-12 Applications

  • Used in high-voltage power switching circuits
  • Suitable for motor control applications
  • Ideal for power supply regulation
  • Applicable in automotive power modules

IPD70N10S3L-12 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage?

The drain-source breakdown voltage is 100V.

What is the gate threshold voltage?

The gate threshold voltage is typically 1.7V.

What is the typical drain-source on-state resistance?

The typical drain-source on-state resistance is 9.6 mΩ at VGS=10V and 70A.

What is the maximum operating temperature?

The maximum operating temperature is 175°C.

What package is this MOSFET supplied in?

This MOSFET is supplied in a PG-TO252-3-11 package.

Is this MOSFET RoHS compliant?

Yes, it is RoHS compliant.

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