IPD70N10S312ATMA1 N-Channel power MOSFET rated at 100V drain-source voltage and 70A continuous drain current with low 11.1 mOhm on-resistance.
Mfr Part #:

IPD70N10S312ATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel power MOSFET rated at 100V drain-source voltage and 70A continuous drain current with low 11.1 mOhm on-resistance.
✓ Total Stock: 100,000 pcs
$ Price Range: $1.03 - $3.50

IPD70N10S312ATMA1 Available from 1 distributor

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✓ Non-Authorised
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100,000 pcs
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IPD70N10S312ATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPD70N10S312ATMA1 Description

Short technical summary and product information.

The Infineon IPD70N10S312ATMA1 is a high-performance N-Channel enhancement mode power MOSFET from the OptiMOS-T family. It features a drain-source breakdown voltage of 100V and continuous drain current of 70A at 25°C (48A at 100°C), with a maximum on-resistance of 11.1 mOhm at 10V gate drive. The device is AEC Q101 qualified for automotive applications and is 100% avalanche tested.

 

The MOSFET exhibits fast switching with typical turn-on delay of 17 ns and rise/fall times of 8 ns, supported by low gate charge (51 nC typical). It comes in a PG-TO252-3-11 surface mount package (equivalent to TO-252-3, DPak) with MSL1 moisture sensitivity. The operating junction temperature range is -55°C to 175°C.

 

Design-in considerations include low thermal resistance junction-to-case of 1.2 K/W and robust avalanche energy capability of 410 mJ (single pulse). The device is RoHS3 compliant and lead-free per Infineon green product standards.

IPD70N10S312ATMA1 Quick Information

Product Type: Power MOSFET
Series: OptiMOS-T
Canonical Name: Infineon IPD70N10S312ATMA1 N-Channel OptiMOS-T Power MOSFET
Subcategory: N-Channel MOSFET

IPD70N10S312ATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPD70N10S312ATMA1 Estimated Pricing

Qty Low High
1+ $3.50 $3.50
10+ $2.28 $2.28
50+ $1.75 $1.75
100+ $1.58 $1.58
500+ $1.29 $1.29
2,500+ $1.09 $1.09
7,500+ $1.03 $1.03

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD70N10S312ATMA1 Features

  • N-Channel enhancement mode power MOSFET.
  • 100V drain-source breakdown voltage.
  • 70A continuous drain current rating.
  • Low on-resistance 11.1 mOhm maximum.
  • AEC Q101 qualified for automotive.

IPD70N10S312ATMA1 Applications

  • Automotive power management systems.
  • Engine control unit power stages.
  • High-current switching regulators.

IPD70N10S312ATMA1 FAQs

4 frequently asked questions generated from this part’s specifications.
What is the operating voltage range?

The drain-source breakdown voltage is 100V, the maximum gate-source voltage is ±20V, and recommended drive voltage for optimal Rds(on) is 10V.

What package is this device available in?

It is offered in PG-TO252-3-11 surface mount package (also known as TO-252-3, DPak (2 Leads + Tab), SC-63).

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

Is this component RoHS compliant?

Yes, the datasheet states the device is RoHS3 compliant. It is also MSL1 up to 260°C peak reflow and REACH unaffected per available data.

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