Mfr Part #:

IPD65R660CFDA

Mfr Name: Infineon

The Infineon IPD65R660CFDA is a 650V CoolMOS CFDA Power MOSFET designed for switching applications. It features an ultra-fast body diode and low losses.

✓ Total Stock: 22,333 pcs

$ Price Range: $2.40

IPD65R660CFDA Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	22,333 pcs On Request	22333 pcs	On Request	1	On Request	On Request	21+	On Request	On Request

IPD65R660CFDA Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon
Gate Charge	20 nC
Halogen Free	Halogen free for mold compound
Lead Style	Gull Wing
Mounting Type	Surface Mount
Reverse Recovery Time	65 ns

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IPD65R660CFDA Description

Short technical summary and product information.

The Infineon IPD65R660CFDA is a 650V CoolMOS CFDA Power MOSFET, a revolutionary technology for high-voltage power MOSFETs. Designed according to the superjunction (SJ) principle, this transistor offers an extremely fast and robust body diode, combined with very low switching, commutation, and conduction losses. Its key electrical characteristics include a maximum Drain-Source Voltage (VDS) of 650V, a maximum On-Resistance (RDS(on)) of 0.66 Ohms, and a typical Gate Charge (Qg) of 20 nC.

This MOSFET is qualified according to AEC-Q101 and comes in a green, RoHS-compliant package (PG-TO 252) suitable for surface mounting. The ultra-fast body diode, high commutation ruggedness, and extremely low losses make it ideal for resonant switching applications, contributing to more reliable, efficient, lighter, and cooler designs. It is specifically designed for switching applications.

Key performance parameters include a pulsed drain current (ID,pulse) of 17A, energy loss (Eoss) at 400V of 1.8 µJ, body diode di/dt of 900 A/µs, reverse recovery charge (Qrr) of 0.2 µC, and reverse recovery time (trr) of 65 ns. The device also features a peak reverse recovery current (Irrm) of 4.5 A.

IPD65R660CFDA Quick Information

Product Type: MOSFET

Series: CoolMOS CFDA

Canonical Name: Infineon IPD65R660CFDA CoolMOS CFDA Power Transistor

Subcategory: Power MOSFET

IPD65R660CFDA Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Pb-free plating

IPD65R660CFDA Estimated Pricing

Qty	Low	High
1+	$2.40	$2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD65R660CFDA Features

Ultra-fast body diode included.
Very high commutation ruggedness.
Extremely low conduction losses.
Designed for switching applications.
AEC-Q101 qualified.

IPD65R660CFDA Applications

Ideal for resonant switching circuits.
Suitable for high-voltage applications.
Enhances efficiency in power designs.
Contributes to lighter, cooler systems.

IPD65R660CFDA FAQs

6 frequently asked questions generated from this part’s specifications.

What is the maximum Drain-Source Voltage (VDS) for the IPD65R660CFDA?

The maximum Drain-Source Voltage (VDS) is 650 V.

What is the maximum On-Resistance (RDS(on)) of the IPD65R660CFDA?

The maximum On-Resistance (RDS(on)) is 0.66 Ω.

What is the typical Gate Charge (Qg) for this MOSFET?

The typical Gate Charge (Qg) is 20 nC.

What package type is the IPD65R660CFDA supplied in?

The IPD65R660CFDA is supplied in a PG-TO 252 package.

Is the IPD65R660CFDA RoHS compliant?

Yes, the IPD65R660CFDA is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the IPD65R660CFDA?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.