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IPD65R650CE The Infineon IPD65R650CE is an N-Channel MOSFET designed for power applications. It features a 650V drain-source voltage and a 560mΩ maximum on-resistance.
Mfr Part #:

IPD65R650CE

Available from 2 distributors
Mfr Name: Infineon
Infineon
The Infineon IPD65R650CE is an N-Channel MOSFET designed for power applications. It features a 650V drain-source voltage and a 560mΩ maximum on-resistance.
✓ Total Stock: 4,756 pcs
$ Price Range: $6.44

IPD65R650CE Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
3,930 pcs
On Request
3930 pcs On Request 1 On Request On Request 17+ On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
826 pcs
On Request
826 pcs On Request 1 On Request On Request 17+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IPD65R650CE Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Input Capacitance
Operating Temperature
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IPD65R650CE Description

Short technical summary and product information.

The Infineon IPD65R650CE is a high-performance N-Channel MOSFET. It is designed for power switching applications and offers a robust 650V drain-source voltage rating.

 

Key electrical characteristics include a maximum on-resistance of 560mΩ at 10V gate drive and a maximum power dissipation of 86W. The device operates within a temperature range of -40°C to 150°C.

 

This MOSFET is housed in a TO-252-3 package, suitable for surface mounting. Its specifications make it a suitable component for various power management circuits where high voltage and efficient switching are required.

IPD65R650CE Quick Information

Product Type: MOSFET
Canonical Name: Infineon IPD65R650CE N-Channel MOSFET
Subcategory: N-Channel Power MOSFET

IPD65R650CE Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPD65R650CE Estimated Pricing

Qty Low High
1+ $6.44 $6.44

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD65R650CE Features

  • 650V drain-source voltage rating.
  • 560mΩ maximum on-resistance.
  • 86W maximum power dissipation.
  • Surface mount TO-252-3 package.
  • Wide operating temperature range.

IPD65R650CE Applications

  • Suitable for power switching applications.
  • Ideal for high voltage designs.
  • Used in power management circuits.
  • Compact surface mount solutions.

IPD65R650CE FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the IPD65R650CE?

The maximum drain-source voltage is 650V.

What is the maximum on-resistance of the IPD65R650CE?

The maximum on-resistance is 560mΩ at 10V.

What is the maximum power dissipation for the IPD65R650CE?

The maximum power dissipation is 86W.

What is the operating temperature range for the IPD65R650CE?

The operating temperature range is -40°C to 150°C.

What package type is the IPD65R650CE available in?

The IPD65R650CE is available in a TO-252-3 package.

How is the IPD65R650CE mounted?

The IPD65R650CE is designed for surface mounting.

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