| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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12,800 pcs
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12800 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
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The Infineon IPD65R600E6 is a CoolMOS N-Channel Power MOSFET designed for high-voltage switching applications. It features a drain-source voltage rating of 650V and a continuous drain current of 7.3A at case temperature. The device utilizes advanced MOSFET technology with a maximum on-resistance of 600mOhm at 10V gate drive and 2.1A drain current. The gate threshold voltage is 3.5V at 210µA, and the recommended drive voltage is 10V. The total gate charge is 23nC, and input capacitance is 440pF at 100V drain-source voltage. This MOSFET is suitable for power conversion, switching power supplies, and motor control circuits. The device is packaged in a surface-mount TO-252-3 (DPak) case, with a supplier device package of PG-TO252-3-313. It operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 63W at case temperature. The part is RoHS3 compliant and REACH unaffected, with an MSL of 1 (unlimited).
The maximum drain-source voltage is 650V.
The IPD65R600E6 is available in a surface-mount TO-252-3 (DPak) package.
The junction temperature range is -55°C to 150°C.
The IPD65R600E6 is RoHS3 compliant (unverified confidence).
The maximum on-resistance is 600mOhm at 10V gate drive and 2.1A drain current.
The total gate charge is 23nC at 10V gate-source voltage.
The continuous drain current is 7.3A at case temperature.