IPD65R600E6 Infineon IPD65R600E6 is a CoolMOS N-Channel Power MOSFET with 650V drain-source voltage and 7.3A continuous drain current. It features a maximum on-resistance of 600mOhm at 10V gate drive and is housed in a surface-mount TO-252 package.
Mfr Part #:

IPD65R600E6

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
Infineon IPD65R600E6 is a CoolMOS N-Channel Power MOSFET with 650V drain-source voltage and 7.3A continuous drain current. It features a maximum on-resistance of 600mOhm at 10V gate drive and is housed in a surface-mount TO-252 package.
✓ Total Stock: 12,800 pcs

IPD65R600E6 Available from 1 distributor

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✓ Non-Authorised
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12,800 pcs
12800 pcs On Request 1 On Request On Request 18+ On Request On Request

IPD65R600E6 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPD65R600E6 Description

Short technical summary and product information.

The Infineon IPD65R600E6 is a CoolMOS N-Channel Power MOSFET designed for high-voltage switching applications. It features a drain-source voltage rating of 650V and a continuous drain current of 7.3A at case temperature. The device utilizes advanced MOSFET technology with a maximum on-resistance of 600mOhm at 10V gate drive and 2.1A drain current. The gate threshold voltage is 3.5V at 210µA, and the recommended drive voltage is 10V. The total gate charge is 23nC, and input capacitance is 440pF at 100V drain-source voltage. This MOSFET is suitable for power conversion, switching power supplies, and motor control circuits. The device is packaged in a surface-mount TO-252-3 (DPak) case, with a supplier device package of PG-TO252-3-313. It operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 63W at case temperature. The part is RoHS3 compliant and REACH unaffected, with an MSL of 1 (unlimited).

IPD65R600E6 Quick Information

Product Type: N-Channel Power MOSFET
Series: CoolMOS E6
Canonical Name: Infineon IPD65R600E6 CoolMOS N-Channel Power MOSFET
Subcategory: N-Channel MOSFET

IPD65R600E6 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

IPD65R600E6 Features

  • 650V drain-source voltage rating.
  • 7.3A continuous drain current capability.
  • Low on-resistance of 600mOhm.
  • CoolMOS technology for efficient switching.
  • Surface mount TO-252 package.

IPD65R600E6 Applications

  • Used in high-voltage power supplies.
  • Suitable for motor drive circuits.
  • Ideal for switching converters.

IPD65R600E6 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IPD65R600E6?

The maximum drain-source voltage is 650V.

What package is the IPD65R600E6 available in?

The IPD65R600E6 is available in a surface-mount TO-252-3 (DPak) package.

What is the operating temperature range of the IPD65R600E6?

The junction temperature range is -55°C to 150°C.

Is the IPD65R600E6 RoHS compliant?

The IPD65R600E6 is RoHS3 compliant (unverified confidence).

What is the on-resistance of the IPD65R600E6?

The maximum on-resistance is 600mOhm at 10V gate drive and 2.1A drain current.

What is the gate charge of the IPD65R600E6?

The total gate charge is 23nC at 10V gate-source voltage.

What is the drain current rating of the IPD65R600E6?

The continuous drain current is 7.3A at case temperature.

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