| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,291 pcs
|
8291 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request | |
|
4,145 pcs
|
4145 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request | |
|
1,804 pcs
|
1804 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Lead Spacing | |
| Mounting Type |
The Infineon IPD65R225C7 is a 650V N-channel power MOSFET from the CoolMOS C7 series. This technology is designed for high voltage power applications, offering benefits such as improved efficiency, reduced gate charge, and enhanced reliability.
Key electrical specifications include a maximum drain-source voltage of 700V, a maximum on-resistance of 225mΩ, and a typical gate charge of 20nC. The device also features a pulse current rating of 41A and an output capacitance (Eoss) of 2.3µJ at 400V. The body diode has a di/dt rating of 55A/µs.
This MOSFET is suitable for applications such as PFC stages and hard-switching PWM stages in computing, server, telecom, UPS, and solar power systems. It is designed for easy implementation and offers increased MOSFET dv/dt ruggedness.
The IPD65R225C7 comes in a PG-TO252-3 package, which is a surface-mount type. The component is Pb-free plating and uses a halogen-free mold compound, aligning with environmental standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.25 | $1.25 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 700V.
The maximum RDS(on) is 225mΩ.
The typical gate charge is 20nC.
The maximum pulsed drain current is 41A.
It is packaged in a PG-TO252-3 surface-mount package.
Yes, it is RoHS3 compliant.
Yes, it has Pb-free plating.