| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,500 pcs
|
7500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Infineon IPD65R1K4CFDBTMA1 is an N-Channel MOSFET belonging to the CoolMOS™ series. It features a high drain-to-source voltage rating of 650V and a continuous drain current of 2.8A at 25°C.
Key electrical characteristics include a maximum on-resistance of 1.4 Ohms at 1A and 10V gate-source voltage, a gate threshold voltage of 4.5V at 100µA, and a maximum gate charge of 10nC at 10V. The input capacitance is rated at a maximum of 262pF at 100V.
This MOSFET has a maximum power dissipation of 28.4W and operates within a temperature range of -55°C to 150°C. It is housed in a TO-252-3, DPak package and is designed for surface mounting.
This component is suitable for various power electronics applications where high voltage and moderate current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.50 | $1.50 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the IPD65R1K4CFDBTMA1 MOSFET is 650V.
The continuous drain current (Id) at 25°C for the IPD65R1K4CFDBTMA1 MOSFET is 2.8A.
The maximum on-resistance (Rds On) for the IPD65R1K4CFDBTMA1 at 1A and 10V is 1.4 Ohms.
The operating temperature range for the IPD65R1K4CFDBTMA1 is -55°C to 150°C.
The IPD65R1K4CFDBTMA1 MOSFET is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package and is designed for surface mounting.