Mfr Part #:

IPD65R190C7

Mfr Name: Infineon

The Infineon IPD65R190C7 is a 650V N-channel Power MOSFET from the CoolMOS C7 series. It features a low on-resistance and is designed for high-efficiency applications.

✓ Total Stock: 22,659 pcs

IPD65R190C7 Available from 3 distributors

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Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	9,309 pcs On Request	9309 pcs	On Request	1	On Request	On Request	16+	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	7,935 pcs On Request	7935 pcs	On Request	1	On Request	On Request	21+	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	5,415 pcs On Request	5415 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IPD65R190C7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon
Gate Charge	23 nC
Halogen Free	Halogen free mold compound
Lead Style	Gull-Wing
Mounting Type	Surface Mount

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IPD65R190C7 Description

Short technical summary and product information.

The Infineon IPD65R190C7 is a high-voltage N-channel Power MOSFET belonging to the CoolMOS C7 technology family. This device offers a maximum drain-source voltage of 700V and a typical on-resistance of 190 mΩ. Its design focuses on enhanced efficiency and reliability, with a typical gate charge of 23 nC and a pulsed drain current capability of 49A.

The CoolMOS C7 technology, based on the superjunction principle, provides benefits such as reduced gate charge and improved figure of merit (FOM), enabling higher switching frequencies and power density. The IPD65R190C7 is suitable for applications like PFC stages and hard-switching PWM stages in computing, server, telecom, UPS, and solar power systems.

This MOSFET is supplied in a PG-TO252-3 surface-mount package. It features Pb-free plating and a halogen-free mold compound, aligning with environmental standards. The device is fully qualified according to JEDEC for Industrial Applications.

IPD65R190C7 Quick Information

Product Type: N-channel Power MOSFET

Series: CoolMOS C7

Canonical Name: Infineon IPD65R190C7 650V CoolMOS C7 N-channel Power MOSFET

Subcategory: N-channel Power MOSFET

IPD65R190C7 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Pb-free plating

IPD65R190C7 Features

650V rated CoolMOS C7 power MOSFET.
190 mΩ maximum on-resistance.
23 nC typical gate charge.
49A pulsed drain current.
PG-TO252-3 surface mount package.

IPD65R190C7 Applications

Suitable for PFC power stages.
Used in hard-switching PWM stages.
Ideal for computing applications.
Designed for server power supplies.
Applicable in telecom systems.

IPD65R190C7 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage for the IPD65R190C7?

The maximum drain-source voltage (VDS) at Tj,max is 700V.

What is the maximum on-resistance of the IPD65R190C7 MOSFET?

The maximum on-resistance (RDS(on)) is 190 mΩ.

What is the typical gate charge for this Infineon MOSFET?

The typical gate charge (Qg) is 23 nC.

What package type is the IPD65R190C7 supplied in?

The IPD65R190C7 is supplied in a PG-TO252-3 package.

Does the IPD65R190C7 meet RoHS standards?

Yes, the RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the IPD65R190C7?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

Is the IPD65R190C7 REACH compliant?

Yes, the REACH status is REACH Unaffected.